Improved model-based infrared reflectrometry for measuring deep trench structures

Journal of the Optical Society of America A: Optics and Image Science, and Vision

Volumn 26, Issue 11, 2009, Pages 2327-2335

  Zhang, Chuanwei ^a   Liu, Shiyuan ^b   Shi, Tielin ^a   Tang, Zirong ^a  

^a HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^b HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BACKPROPAGATION; MICROELECTRONICS; REFLECTION; SIMULATORS;

ACCURATE MEASUREMENT; ACCURATE MODELING; ARTIFICIAL NEURAL NETWORK; DEEP TRENCH STRUCTURE; EFFECTIVE MEDIUM APPROXIMATION; FAST COMPUTATION SPEED; FAST EXTRACTION; GEOMETRIC PARAMETER; IMPROVED MODELS; LEVENBERG-MARQUARDT ALGORITHM; MODEL-BASED; MODELING METHOD; REFLECTANCE SPECTRUM; REFLECTROMETRY;

NEURAL NETWORKS;

EID: 70449711345     PISSN: 10847529     EISSN: 15208532     Source Type: Journal    
DOI: 10.1364/JOSAA.26.002327     Document Type: Article

References (24)

1. U. Schroeder, S. Jakschik, A. Avellan, E. Erben, B. Hintze, R. Duschl, M. Kerber, A. Link, and A. Kersch, "Recent developments in ALD technology for 50 nm trench DRAM applications," ECS Trans. 1, 125-132 (2006).
2. U. Rudolph, E. Weikmann, A. Kinne, A. Henke, P. Van Holt, S. Wege, A. Khan, S. Pamarthy, F. Schaftlein, and T. U. Lill, "Extending the capabilities of DRAM high aspect ratio trench etching," in Proceedings of IEEE Conference on Advanced Semiconductor Manufacturing (IEEE, 2004), pp. 89-92.
3. R. Srivastava, P. Yelehanka, H. A. Kek, S. L. Ng, V. Srinivasan, and R. Peltinov, "A novel approach to characterize trench depth and profile using the 3D tilt capability of a critical dimension-scanning electron microscope at 65 nm technology node," Proc. SPIE 6152, 61524I (2006).
4. M. Watanabe, S. Baba, T. Nakata, T. Kurenuma, H. Kuroda, and T. Hiroki, "An advanced AFM sensor for high-aspect ratio pattern profile in-line measurement," Proc. SPIE 6152, 61522A (2006).
5. E. Buhr, W. Michaelis, A. Diener, and W. Mirande, "Multiwavelength VIS/UV optical diffractometer for highaccuracy calibration of nano-scale pitch standards," Meas. Sci. Technol. 18, 667-674 (2007).
6. C. J. Raymond, M. Littau, R. Markle, and M. Purdy, "Scatterometry for shallow trench isolation (STI) process metrology," Proc. SPIE 4344, 716-725 (2001). (Pubitemid 32993556)
7. A. A. Maznev, A. Mazurenko, C. A. Durán, and M. Gostein, "Measuring trench structures for microelectronics with model-based infrared reflectometry," AIP Conf. Proc. 931, 74-78 (2007).
8. P. A. Rosenthal, C. A. Durán, J. Tower, and A. Mazurenko, "Model-based infrared metrology for advanced technology nodes and 300 mm wafer processing," AIP Conf. Proc. 788, 620-624 (2005).
9. C. A. Durán, A. A. Maznev, G. T. Merklin, A. Mazurenko, and M. Gostein, "Infrared reflectometry for metrology of trenches in power devices," in Proceedings of IEEE Conference on Advanced Semiconductor Manufacturing (IEEE, 2007), pp. 175-179.
10. K. Chadan, D. Colton, L. Päivärinta, and W. Rundell, An Introduction to Inverse Scattering and Inverse Spectral Problems (SIAM, 1987).
11. X. Niu, N. Jakatdar, J. Bao, and C. J. Spanos, "Specular spectroscopic scatterometry," IEEE Trans. Semicond. Manuf. 14, 97-111 (2001).
12. R. T. Zheng, N. Q. Ngo, L. N. Binh, and S. C. Tjin, "Two-stage hybrid optimization of fiber Bragg gratings for design of linear phase filters," J. Opt. Soc. Am. A 21, 2399-2405 (2004).
13. K. Hehl, J. Bischoff, U. Mohaupt, M. Palme, B. Schnabel, L. Wenke, R. Bödefeld, W. Theobald, E. Welsch, R. Sauerbrey, and H. Heyer, "High-efficiency dielectric reflection gratings: design, fabrication, and analysis," Appl. Opt. 38, 6257-6271 (1999).
14. R. P. Lippmann, "An introduction to computing with neural nets," IEEE ASSP Mag. 4, 4-22 (1987).
15. I. Gereige, S. Robert, S. Thiria, F. Badran, G. Granet, and J. J. Rousseau, "Recognition of diffraction-grating profile using a neural network classifier in optical scatterometry," J. Opt. Soc. Am. A 25, 1661-1667 (2008).
16. B. Kaplan, T. Novikova, A. D. Martino, and B. Drévillon, "Characterization of bidimensional gratings by spectroscopic ellipsometry and angle-resolved Mueller polarimetry," Appl. Opt. 43, 1233-1240 (2004).
17. G. E. Jellison, "Physics of optical metrology of silicon-based semiconductor devices," in Handbook of Silicon Semiconductor Metrology, A. C. Diebold, ed. (Marcel Dekker, 2001), pp. 723-760.
18. S. M. Rytov, "Electromagnetic properties of a finely stratified medium," Sov. Phys. JETP 2, 466-475 (1956).
19. S. Y. Liu, H. Y. Gu, C. W. Zhang, and H. W. Shen, "A fast algorithm for reflectivity calculation of micro/nano deep trench structures by corrected effective medium approximation," Acta Phys. Sin. 57, 5996-6001 (2008).
20. W. H. Southwell, "Pyramid-array surface-relief structures producing antireflection index matching on optical surfaces," J. Opt. Soc. Am. A 8, 549-553 (1991).
21. R. Bräuer and O. Bryngdahl, "Design of antireflection gratings with approximate and rigorous methods," Appl. Opt. 33, 7875-7882 (1994).
22. P. Lalanne and D. L. Lalanne, "On the effective medium theory of subwavelength periodic structure," J. Mod. Opt. 43, 2063-2085 (1996).
23. P. Lalanne and D. L. Lalanne, "Depth dependence of the effective properties of subwavelength gratings," J. Opt. Soc. Am. A 14, 450-458 (1997).
24. S. Y. Liu, C. W. Zhang, H. W. Shen, and H. Y. Gu, "Modelbased FTIR reflectometry measurement system for deep trench structures of DRAM," Spectrosc. Spectr. Anal. 29, 935-939 (2009).