Extending the capabilities of DRAM high aspect ratio trench etching

IEEE International Symposium on Semiconductor Manufacturing Conference, Proceedings

Volumn , Issue , 2004, Pages 89-92

  Rudolph, Uwe ^a   Weikmann, Elisabeth ^b   Kinne, Andreas ^a   Henke, Axel ^a   Vanholt, Peter ^a   Wege, Stephan ^a   Khan, Anisul ^c   Pamarthy, Sharma ^c   Schäftlein, Frank ^d   Lill, Thorsten ^c  

^a INFINEON TECHNOLOGIES AG   (Germany)

^b Applied Materials GmbH   (Germany)

^c APPLIED MATERIALS INC   (United States)

^d Applied Materials GmbH   (Germany)

Author keywords

Aspect ratio; DRAM; Trench etch

Indexed keywords

ASPECT RATIO; CAPACITORS; ETCHING; OPTIMIZATION; PLASMAS; SCANNING ELECTRON MICROSCOPY;

PLASMA REACTORS; PRODUCTION STABILITY; TRENCH ETCHING;

DYNAMIC RANDOM ACCESS STORAGE;

EID: 4544258520     PISSN: 1523553X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

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