Infrared reflectometry for metrology of trenches in power devices

ASMC (Advanced Semiconductor Manufacturing Conference) Proceedings

Volumn , Issue , 2007, Pages 175-180

  Duran C A ^a   Maznev, A A ^a   Merklin, G T ^a   Mazurenko, A ^a   Gostein, M ^a  

^a PHILIPS RESEARCH LABORATORIES   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DATA STORAGE EQUIPMENT; MATHEMATICAL MODELS; REFLECTOMETERS; SILICON;

MODEL-BASED INFRARED REFLECTOMETRY (MBIR); POWER DEVICES;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 34748904618     PISSN: 10788743     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ASMC.2007.375086     Document Type: Conference Paper

References (7)

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2. U. Mantz and A. Kasic, "Model-Based Infrared Spectroscopy: New Opportunities for In-Line Process Control," Future Fab, Vol. 19, June 2005.
3. M. Gostein, P.A. Rosenthal, A. Maznev, A. Kasic, P Weidner, and P.-Y. Guittet, "Measuring Deep-Trench Structures with Model-Based IR," Solid State Technology, March 2006, pp. 38-42.
4. P.-Y. Guittet, "Model-Based Infrared Reflectometry: In-Line Applications for DRAM Manufacturing," Future Fab, 2006.
5. C.J. Raymond, "Scatterometry for semiconductor metrology", in Handbook of Silicon Semiconductor Metrology, A.C. Diebold, Ed. New York: Marcel-Dekker, 2001, pp 477-513
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7. X. Niu, et al, "Specular Spectroscopic Scatterometry," IEEE Transactions On Semiconductor Manufacturing, Vol. 14, No. 2, May 2001, pp. 97-111.