A novel approach to characterize trench depth and profile using the 3D tilt capability of a critical dimension-scanning electron microscope at 65nm technology node

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6152 II, Issue , 2006, Pages

  Srivastava, R ^a   Yelehanka, P ^a   Kek, H A ^b   Ng, S L ^b   Srinivasan, V ^b   Peltinov, R ^c  

^a CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

^b Applied Materials South East Asia Pte Ltd ^*  (Singapore)

^c Applied Materials Inc Israel   (Israel)

Author keywords

Damascene; Profile reconstruction; RC delay; Tilt; Trench depth

Indexed keywords

DAMASCENE; PROFILE RECONSTRUCTION; RC DELAY; TILT; TRENCH DEPTH;

DIELECTRIC FILMS; NANOTECHNOLOGY; NONDESTRUCTIVE EXAMINATION; PLASMA ETCHING; PROCESS CONTROL; SILICON WAFERS; TRENCHING;

SCANNING ELECTRON MICROSCOPY;

EID: 33745587277     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.659717     Document Type: Conference Paper

References (5)

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