Recent developments in ALD technology for 50nm trench DRAM applications

ECS Transactions

Volumn 1, Issue 5, 2006, Pages 125-132

  Schroeder, Uwe ^a   Jakschik, Stefan ^a   Erben, Elke ^a   Avellan, Alejandro ^a   Kudelka, Stephan ^a   Kerber, Martin ^a   Link, Angela ^a   Kersch, Alfred ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; CAPACITANCE; CAPACITORS; DEPOSITION; DIELECTRIC MATERIALS;

DEEP TRENCH CAPACITORS; FILM STACK;

DYNAMIC RANDOM ACCESS STORAGE;

EID: 33845276949     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2209261     Document Type: Conference Paper

References (6)

1. Luetzen et.al., Proceedings of VLSI Symposium, 2002
2. D. Blin et al., AVS-ALD Conference 2002, Seoul
3. D.H.Triyoso et al., J. of Appl. Phys., 97, 124107 2005
4. K. Kukli, M. Ritala, et al., J. Electrochem. Soc., 151, F189 2004
5. Y.Widjaja, Ch.B.Musgrave, J.Chem.Phys., 117, 1931 2002
6. P.D. Kirsch et al., Proceedings of VLSI Symposium, 2005