The properties of transparent semiconductor Zn1 - xTixO thin films prepared by the sol-gel method

Thin Solid Films

Volumn 518, Issue 5, 2009, Pages 1603-1606

  Tsay, Chien Yie ^a   Cheng, Hua Chi ^b   Chen, Chin Yi ^a   Yang, Kan Ju ^a   Lin, Chung Kwei ^a  

^a FENG CHIA UNIVERSITY   (Taiwan)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

Sol gel method; Transparent oxide semiconductors; Zn1 xTixO thin films

Indexed keywords

COATED FILMS; ELECTRICAL RESISTIVITY; GLASS SUBSTRATES; OPTICAL TRANSMITTANCE; POLYCRYSTALLINE; PREFERRED ORIENTATIONS; PURE ZNO; RMS ROUGHNESS; SOL-GEL METHOD; SOL-GEL METHODS; TI ADDITION; TRANSPARENT OXIDE SEMICONDUCTORS; TRANSPARENT SEMICONDUCTOR; ZN1 - XTIXO THIN FILMS; ZNO THIN FILM;

ELECTRIC CONDUCTIVITY; GELATION; GELS; METALLIC FILMS; OPTICAL FILMS; OPTICAL PROPERTIES; PHOTORESISTS; SEMICONDUCTING ZINC COMPOUNDS; SOL-GELS; SOLS; SURFACE ROUGHNESS; THIN FILMS; ZINC; ZINC OXIDE;

SOL-GEL PROCESS;

EID: 70449491220     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.09.054     Document Type: Article

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