Relationship between residual stress and crystallographic structure in Ga-Doped ZnO film

Journal of the Electrochemical Society

Volumn 155, Issue 9, 2008, Pages

  Yamamoto, Naoki ^a   Yamada, Takahiro ^a   Miyake, Aki ^a   Makino, Hisao ^a   Kishimoto, Seiichi ^b   Yamamoto, Tetsuya ^a  

^a KOCHI UNIVERSITY OF TECHNOLOGY   (Japan)

^b KOCHI NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE MATERIALS; ELECTRONICS INDUSTRY; GALLIUM; HEATING; METALLIC FILMS; MICROELECTRONICS; RESIDUAL STRESSES; SEMICONDUCTING ZINC COMPOUNDS; STRENGTH OF MATERIALS; THICK FILMS; ZINC; ZINC ALLOYS; ZINC OXIDE; ZINC SULFIDE;

CRYSTALLINE STRUCTURES; CRYSTALLOGRAPHIC STRUCTURES; CYCLE TESTING; FILM-THICKNESS; FILMS THINNER; GA-DOPED ZNO; HEATING CYCLES; REACTIVE DEPOSITION; ROOM TEMPERATURES; STRESS COMPONENTS; SUBSTRATE SURFACES; THREE ORDERS OF MAGNITUDE; VERTICAL DIRECTIONS; VOLUME SHRINKAGE; WURTZITE; WURTZITE STRUCTURES;

MOLECULAR BEAM EPITAXY;

EID: 49149130298     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2945912     Document Type: Article

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