Self-organization of a highly integrated silicon nanowire network on a si(110)-16 × 2 surface by controlling domain growth

Advanced Functional Materials

Volumn 19, Issue 21, 2009, Pages 3389-3395

  Hong, Le Hong ^a   Liao, Yen Chieh ^a   Yen, Shang Chieh ^a  

^a NATIONAL CHIAYI UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; BOTTOM-UP NANOFABRICATION; CROSSBAR CIRCUITS; CROSSED ARRAY; DEVICE APPLICATION; DOMAIN GROWTH; HIGH INTEGRATION DENSITY; HIGH THROUGHPUT; HIGHLY INTEGRATED; LATERAL GROWTH; MESOSCOPICS; MOLECULAR CROSSBARS; NANOCIRCUITS; NANOFABRICATION; NANOMESH; NANOTEMPLATES; QUANTUM CONFINEMENT EFFECTS; SELF-ASSEMBLED; SELF-ORGANIZATIONS; SELF-ORGANIZE; SI(110); SILICON NANOWIRES; ULTRAHIGH DENSITY;

MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; NANOWIRES; NETWORKS (CIRCUITS); SEMICONDUCTOR GROWTH; SILICIDES; SILICON;

TWO DIMENSIONAL;

EID: 70449125784     PISSN: 1616301X     EISSN: 16163028     Source Type: Journal    
DOI: 10.1002/adfm.200900974     Document Type: Article

References (53)

1. W. Lu, C. M. Lieber, Nat. Mater. 2007, 6, 841.
2. B. Yu, M. Meyyappen, Solid-State Electronics 2006, 50, 536.
3. R. Agarawal, Small 2008, 4, 1872.
4. H. B. Akkerman, P. W. M. Blom, D. M. Leeuw, B. Boer, Nature 2006, 447, 69.
5. Y. Chen, G.-Y. Jung, D. A. A. Ohlberg, X. LI, D. R. Stewart, J. O. Jeppesen, K. A. Nielsen, J. F. Stoddart, R. S. Williams, Nanotechnology 2003, 14, 462.
6. Y. Luo, C. P. Collier, J. O. Jeppesen, K. A. Nielsen, E. Delonno, G. Ho, J. Perkins, H.-R. Tseng, T. Yamamoto, J. F. Stoddart, J. R. Heath, ChemPhysChem. 2002, 3, 519.
7. Y. Cui, C. M. Lieber, Science 2001, 291, 851.
8. Y. Huang, X. Duan, Q. Wei, C. M. Lieber, Science 2001, 291, 630.
9. Y. Wu, J. Xiang, C. Yang, W. Lu, C. M. Lieber, Nature 2004, 430, 61.
10. Y. Huang, X. Duan, Y. Cui, L. J. Lauhon, K.-H. Kim, C. M. Lieber, Science 2001, 294, 1313.
11. D. Wang, B. A. Sheriff, J. R. Heath, Small 2006, 2, 1153.
12. Z. Zhong, D. Wang, Y. Cui, M. W. Bockrath, C. M. Lieber, Science 2003, 302, 1377.
13. G. S. Snider, R. S. Williams, Nanotechnology 2007, 18, 035204.
14. J. E. Green, J. W. Choi, A. Boukai, Y. Bunimovich, E. Johnston-Halperin, E. Delonno, Y. Luo, B. A. Sheriff, K. Xu, Y. S. Shinl H.-R. Tseng, J. F. Stoddart, J. R. Heath, Nature 2007, 445, 414.
15. Y. Huang, X. F. Duan, C. M. Lieber, Small 2005, 1, 142.
16. D. Wang, B. A. Sheriff, M. McAlpine, J. R. Heath, Nono Res. 2008, 1, 9.
17. Z. Li, M. D. Pickett, D. Stewart, D. A. A. Ohlberg, X. Li, W. Wu, W. Robinett, R. S. Williams, Nanotechnology 2008, 19, 165203.
18. a) Y. Xia, P. Yang, Y. Sun, Y. Wu, B. Mayers, B. Gates, Y. Yin, F. Kim, H. Yan, Adv. Mater. 2003, 15, 353.
19. b) P. Aella, S. Ingole, W. T. Petuskey, S. T. Picraux, Adv. Mater. 2007, 19, 2603.
20. H. Sahaf, L. Masson, C. Léandri, B. Aufray, G. Le Lay, F. Ronci, Appl. Phys. Lett. 2007, 90, 263110.
21. P. D. Padova, C. Quaresima, P. Perfetti, B. Olivieri, C. Leandri, B. Aufray, S. Vizzini, G. L. Lay, Nano Lett. 2008, 8, 271.
22. C. Leandri, G. Le Lay a, B. Aufray, C. Girardeaux, J. Avila, M. E. Dávila, M. C. Asensio, C. Ottaviani, A. Cricenti, Surf. Sci. 2005, 574, L9.
23. V. A. Shchukin, D. Bimberg, Rev. Mod. Phys. 1999, 71, 1125.
24. T. Sekiguchi, S. Yoshida, K. M. Itoh, Phys. Rev. Lett. 2005, 95, 106101.
25. J. R. Ahn, P. G. Kang, K. D. Ryang, H. W. Yeom, Phys. Rev. Lett. 2005, 95, 196402.
26. I.-H. Hong, S.-C. Yen, F.-S. Lin, Small, 2009, 5, 1855.
27. a) M. Yang, W. C. Chan, L. Shi, D. M. Fried, J. H. Stathis, A. I. Chou, E. Gusev, J. A. Ott, L. E. Burns, M. V. Fischetti, M. Ieong, IEEE Trans. Electron Devices 2006, 53, 965.
28. b) T. Mizuno, N. Sugiyama, T. Tezuka, Y. Moriyama, S. Nakaharai, S.-I. Takagi, IEEE Trans. Electron Devices 2005, 52, 367.
29. c) Y. Liu, K. Ishii, T. Tsutsumi, M. Masahara, T. Sekigawa, K. Sakamoto, H. Takashima, H. Yamauchi, E. Suzuki, IEEE Trans. Nanotechnol. 2003, 2, 198.
30. a) W. Cheng, A. Teramoto, M. Hirayama, S. Sugawa, T. Ohmi, Jpn. J. Appl. Phys. 2006, 45, 3110.
31. b) H. Nakamura, T. Ezaki, T. Iwamoto, M. Togo, T. Ikezawa, N. Ikarashi, M. Hane, T. Yamamoto, Jpn. J. Appl. Phys. 2004, 43, 1723.
32. c) S. Sugawa, I.Ohshima, H. Ishino, Y. Saito, M. Hirayama, T. Ohmi, Tech. Dig, Int. Electron Devices Meet. 2001, 37.3.1-4.
33. T. An, M. Yoshimura, K. Ueda, Phys. Rev. B 2000, 61, 3006.
34. Y. Yamamoto, T. Sueyoshi, T. Sato, M. Iwatsuki, Surf. Sci. 2000, 466, 183.
35. A. A. Stekolnikov, J. Furthmüller, F. Bechstedt, Phys. Rev. Lett. 2004, 93, 136104.
36. Z. He, M. Stevens, D. J. Smith, P. A. Bennett, Appl. Phys. Lett. 2003, 83, 5292.
37. J. L. McChesney, J. N. Crain, F. J. Himpsel, R. Bennewitz, Phys. Rev. B 2005, 72, 035446.
38. T. An, M. Yoshimura, K. Ueda, Surf. Sci. 2005, 576, 165.
39. W. E. Packard, J. D. Dow, Phys. Rev. S 1997, 55, 15643.
40. P. Soukiassian, F. Semond, A. Mayne, G. Dujardin, Phys. Rev. Lett. 1997, 79, 2498.
41. N. A. Melosh, A. Boukai, F. Diana, B. Gerardot, A. Badolato, P. M. Petroff, J. R. Heath, Science 2003, 300, 112.
42. D. Whang, S. Jin, Y. Wu, C. M. Lieber, Nano Lett. 2003, 3, 1255.
43. The two lines A1 and B1 are not perpendicular to the horizontal and oblique SiNWs, but are instead inclined with respect to the horizontal and oblique SiNWs by 70.5°. The spacing between the two peaks measured in the line profiles A1 and B1 are not the actual pitches of the horizontal and oblique SiNWs. Nevertheless, these line-scan profiles A1 and B1 can be used to clearly show the long-range periodic repetition and the well-defined shapes of these parallel-aligned horizontal/oblique SiNWs without any inter- ference of those oblique-/horizontally-crossing NWs and lower Si terraces of Substrate. The actual periodicity of the horizontal and oblique SiNWs can be easily obtained by directly multiplying their well-defined counterparts measured in the line profiles A1 and B1 by a factor of sin(70.5°).
44. G. Hodes, Adv. Mater. 2007, 19, 639.
45. X. Zhao, C. M. Wei, L. Yang, M. Y. Chou, Phys. Rev. Lett. 2004, 92, 236805.
46. D. D. D. Ma, C. S. Lee, F. C. K. Au, S. Y. Tong, S. T. Lee, Science 2003, 299, 1874.
47. J. P. You, J. H. Choi, S. Kim, X. Li, R. S. Williams, R. Ragan, Nono Lett. 2006, 6, 1858.
48. J.-H. Ahn, H.-S. Kim, K. J. Lee, S. Jeon, S. J. Kang, Y. Sun, R. G. Nuzzo, J. A. Rogers, Science 2006, 314, 1754.
49. D. Wang, F. Qian, C. Yang, Z. Zhong, C. M. Lieber, Nano Lett. 2004, 4, 871.
50. B. Yang, F. Liu, M. G. Lagally, Phys. Rev. Lett. 2003, 92, 025502.
51. Y. Homma, P. Finnie, T. Ogino, H. Noda, T. Urisu, J. Appl. Phys. 1999, 86, 3083.
52. A. I. Hochbaum, R. Fan, R. He, P. Yang, Nano Lett. 2005, 5, 457.
53. J. L. O'Brien, S. R. Schofield, M. Y. Simmons, R. G. Clark, A. S. Dzurak, N. J. Curson, B. E. Kane, N. S. McAlpine, M. E. Hawley, G. W. Brown, Phys. Rev. B 2001, 64, 161401(R).