Relationship between current transport and electroluminescence in Si+-implanted SiO2 thin films

IEEE Transactions on Electron Devices

Volumn 56, Issue 11, 2009, Pages 2785-2791

  Ding, Liang ^a,b   Chen, T P ^a   Yang, Ming ^a   Wong, Jen It ^a   Cen, Zhanhong ^a   Liu, Yang ^a,c   Zhu, Furong ^d   Tseng, Ampere A ^e  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

^c UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

^d INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^e Arizona State University   (United States)

Author keywords

Current transport; Electroluminescence; Photoluminescence; Si LED; Silicon nanocrystal

Indexed keywords

CURRENT TRANSPORT; EXCESS SI; LINEAR RELATIONSHIPS; LOW ENERGY ION IMPLANTATION; POWER LAW; SI LED; SILICON NANOCRYSTAL;

ELECTROLUMINESCENCE; ION BOMBARDMENT; ION IMPLANTATION; LIGHT EMISSION; NANOCRYSTALS; PHOTOLUMINESCENCE; SILICON; SILICON COMPOUNDS; SILICON OXIDES; SILICON SOLAR CELLS; SOLID-STATE SENSORS; THIN FILMS;

OXIDE FILMS;

EID: 70350743002     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2031017     Document Type: Article

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