Correlation between optical properties and Si nanocrystal formation of Si-rich Si oxide films prepared by plasma-enhanced chemical vapor deposition

Applied Surface Science

Volumn 253, Issue 5, 2006, Pages 2718-2726

  Chen, X Y ^a   Lu, Y F ^b   Wu, Y H ^a   Cho, B J ^a   Tang, L J ^c   Lu, D ^c   Dong, J R ^d  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b UNIVERSITY OF NEBRASKA LINCOLN   (United States)

^c INSTITUTE OF MICROELECTRONICS   (Singapore)

^d INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

Optical properties; Plasma enhanced chemical vapor deposition; Silicon nanocrystals; Silicon oxide

Indexed keywords

ANNEALING; OPTICAL CORRELATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILANES; VACUUM;

ANNEALING TEMPERATURE; QUANTUM CONFINEMENT MODEL; SILICON NANOCRYSTALS; THERMAL ANNEALING;

THIN FILMS;

EID: 33751417202     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2006.05.060     Document Type: Article

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