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Applied Physics A: Materials Science and Processing

Volumn 71, Issue 3, 2000, Pages 299-303

Voltage-controlled electroluminescence from SiO2 films containing Ge nanocrystals and its mechanism

(4) Zhang, J Y a,b Ye, Y H c Tan, X L c Bao, X M b

a SOUTHEAST UNIVERSITY (China)

b NANJING UNIVERSITY (China)

c NANJING NORMAL UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC EXCITATION; ELECTRONS; GERMANIUM; INTERFACES (MATERIALS); ION IMPLANTATION; NANOSTRUCTURED MATERIALS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICA; VOLTAGE CONTROL; X RAY DIFFRACTION ANALYSIS;

GERMANIUM NANOCRYSTAL; METAL OXIDE SEMICONDUCTOR STRUCTURES; SILICON DIOXIDE FILMS;

ELECTROLUMINESCENCE;

EID: 0034274704 PISSN: 09478396 EISSN: None Source Type: Journal
DOI: 10.1007/s003390000518 Document Type: Article

Times cited : (12)

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