Evolution of photoluminescence mechanisms of Si +-implanted SiO 2 films with thermal annealing

Journal of Nanoscience and Nanotechnology

Volumn 8, Issue 7, 2008, Pages 3555-3560

  Ding, L ^a   Chen, T P ^a   Liu, Y ^a   Ng, C Y ^a   Yang, M ^a   Wong, J I ^a   Zhu, F R ^b   Tan, M C ^b   Fung, S ^c   Chen, X D ^c   Huang, Y ^c  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^c UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

Optical properties; Photoluminescence; Si ion implantation; Si nanocrystals

Indexed keywords

ANNEALING TEMPERATURES; BAND TRANSITIONS; EXTENDED DEFECTS; LUMINESCENT CENTERS; OXIDE MATRIXES; PHOTOLUMINESCENCE MECHANISMS; PL BANDS; SI ION IMPLANTATION; SI NANOCRYSTALS; SILICON NANOCRYSTALS; STRETCHING FREQUENCIES; THERMAL ANNEALING;

BAND STRUCTURE; ION BOMBARDMENT; ION IMPLANTATION; LIGHT EMISSION; LUMINESCENCE; NANOCRYSTALLINE ALLOYS; NANOCRYSTALS; NANOSTRUCTURES; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON COMPOUNDS; THICK FILMS;

ANNEALING;

EID: 55849119250     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2008.128     Document Type: Article

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