Defect-enhanced visible electroluminescence of multi-energy silicon-implanted silicon dioxide film

IEEE Journal of Quantum Electronics

Volumn 41, Issue 3, 2005, Pages 441-447

  Lin, Chun Jung ^a   Lin, Gong Ru ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Electroluminescence (EL); MOS diode; Photoluminescence (PL); Si ion implantation; Si rich silicon dioxide

Indexed keywords

ABSORPTION SPECTROSCOPY; ANNEALING; CHEMICAL BONDS; CRYSTAL DEFECTS; ELECTROLUMINESCENCE; ION IMPLANTATION; MOS DEVICES; NANOSTRUCTURED MATERIALS; SEMICONDUCTING SILICON; SEMICONDUCTOR DIODES; THICK FILMS; VISIBILITY;

DEFECT ENHANCED VISIBLE ELECTROLUMINESCENCE; MOS DIODE; SILICON DIOXIDE FILM; SILICON ION IMPLANTATION; SILICON RICH SILICON DIOXIDE;

SILICA;

EID: 15744381254     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2004.842314     Document Type: Article

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