Progress toward nanoscale silicon light emitters

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 4, Issue 6, 1998, Pages 1020-1028

  Fauchet, Philippe M ^{a,b,c,d,e,f,g,h,i,j}  

^a IEEE   (United States)

^b University of Rochester   (United States)

^c STANFORD UNIVERSITY   (United States)

^d BROWN UNIVERSITY   (United States)

^e FACULTÉ POLYTECHNIQUE DE MONS   (Belgium)

^f Institute of Optics   (United States)

^g UNIVERSITY OF ROCHESTER   (United States)

^h Center for Future Health   (United States)

ⁱ OPTICAL SOCIETY OF AMERICA   (United States)

^j AMERICAN PHYSICAL SOCIETY   (United States)

more..

Author keywords

Display; Electroluminescence; Light emitting device; Nanocrystallite; Photoluminescence; Porous silicon

Indexed keywords

CRYSTALLINE MATERIALS; DISPLAY DEVICES; ELECTRIC PROPERTIES; ENERGY GAP; MICROELECTRONICS; NANOSTRUCTURED MATERIALS; PASSIVATION; PHOTOLUMINESCENCE; POROUS SILICON; QUANTUM THEORY; SEMICONDUCTING SILICON; THERMODYNAMIC PROPERTIES;

LIGHT-EMITTING DEVICES;

LUMINESCENT DEVICES;

EID: 0032206912     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.736103     Document Type: Article

References (59)

1. L. T. Canham, "Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers," Appl. Phys. Lett., vol. 57, pp. 1046-1048, 1990.
2. P. M. Fauchet, "Photoluminescence and electroluminescence from porous silicon," J. Luminesc., vol. 70, pp. 294-309, 1996.
3. R. T. Collins, P. M. Fauchet, and M. A. Tischler, "Porous silicon: From luminescence to LEDs," Physics Today, vol. 50. pp. 24-31, Jan. 1997.
4. P. M. Fauchet, "Light emission in silicon: From physics to devices," Semiconductors and Semimetals, D. J. Lockwood, Ed. San Diego, CA: Academic, vol. 49, pp. 206-252.
5. A. Uhlir, Jr., "Electrolytic shaping of germanium and silicon," Bell Syst. Tech. J., vol. 35, pp. 333-347, 1956.
6. R. L. Smith and S. D. Collins, "Porous silicon formation mechanisms," J. Appl. Phys., vol. 71, pp. R1-R22, 1992.
7. P. M. Fauchet, L. Tsybeskov, C. Peng, S. P. Duttagupta, S. von Behren, Y. Kostoulas, J. V. Vandyshev, and K. D. Hirschman, "Light-emitting porous silicon: Materials science, properties, and device applications," IEEE J. Select. Topics Quantum Electron., vol. 1, pp. 1126-1139, 1995.
8. P. M. Fauchet, Pits and Pores: Formation, Properties, and Significance for Advanced Luminescent Materials, P. Schmuki, D. J. Lockwood, H. Isaacs, and A. Bsiesy, Eds. Pennington, NJ: Electrochem. Soc., 1997, pp. 27-60.
9. P. M. Fauchet and J. von Behren, "The strong visible luminescence in porous silicon: Quantum confinement, not oxide-related defects," Phys. Stat. Sol. (b), vol. 204, pp. R7-R8, 1997.
10. R. E. Hummel, A. Morrone, M. Ludwig, and S. S. Chang, "On the origin of photoluminescence in spark-eroded (porous) silicon," Appl. Phys. Lett., vol. 63, pp. 2771-2773, 1993.
11. A. G. Nassiopoulos, S. Grigoropoulos, D. Papadimitriou, and E. Gogolides, "Light emission from silicon nanostructures produced by conventional lithographic and reactive ion etching techniques," Phys. Stat. Sol. (b), vol. 190, pp. 91-95, 1995.
12. S. H. Zaidi, A.-S. Chu, and S. R. J. Brueck, "Scalable fabrication and optical characterization of nm Si structures," in Proc. Symp. Mater. Res. Soc., 1995, vol. 358, pp. 957-968.
13. H. Tamura, M. Ruckschloss, T. Wirschem, and S. Veprek, "Origin of the green/blue luminescence from nanocrystalline silicon," Appl. Phys. Lett., vol. 65, pp. 92-95, 1994.
14. L. Tsybeskov, K. D. Hirschman, S. P. Duttagupta, P. M. Fauchet, M. Zacharias, J. P. McCaffrey, and D. J. Lockwood, "Fabrication of nanocrystalline silicon superlattices by controlled thermal recrystallization," Phys. Stat. Sol. (a), vol. 165, pp. 69-77, 1998.
15. L. Tsybeskov, K. D. Hirschman, S. P. Duttagupta, M. Zacharias, P. M. Fauchet, J. McCaffrey, and D. J. Lockwood, "Nanocrystalline-silicon superlattice produced by controlled recrystallization," Appl. Phys. Lett., vol. 72, pp. 43-45, 1998.
16. V. Petrova-Koch, T. Fischer, K. Sheglov, and F. Koch, "Optical properties of photoluminescing Si/sup +/-implanted SiO/sub 2/ films," in Advanced Luminescent Materials, D. J. Lockwood, P. M. Fauchet, N. Koshida, and S. R. J. Brueck, Eds. Pennington, NJ: Electrochem. Soc., 1996, pp. 382-392.
17. K. A. Littau, P. J. Szajowski, A. J. Miller, A. R. Kortan, and L. E. Brus, "A luminescent silicon nanocrystal colloid via a high-temperature aerosol reaction," J. Phys. Chem., vol. 97, pp. 1224-1230, 1993.
18. L. T. Canham, A. G. Cullis, C. Pickering, O. D. Dosser, T. I. Cox, and T. P. Lynch, "Luminescent anodized silicon aerocrystal networks prepared by supercritical drying," Nature, vol. 368, pp. 133-135, 1994.
19. J. von Behren, E. H. Chimowitz, and P. M. Fauchet, "Critical behavior and the processing of nanoscale porous materials," Adv. Mater., vol. 9, p. 921, 1997.
20. D. Bellet, "Drying of porous silicon," in Properties of Porous Silicon, L. T. Canham, Ed. London, U.K.: INSPEC, Ins. Elect. Eng., 1997, Electronic Materials Information Service Datareviews Series no, 18, pp. 38-43.
21. V. S. Y. Lin, K. Motesharei, K. P. S. Dancil, M. J. Sailor, and M. R. Ghadiri, "A porous silicon-based optical interferometric biosensor," Science, vol. 278, pp. 840-843, 1997.
22. M. J. Sailor and E. J. Lee, "Surface chemistry of luminescent silicon nanocrystallites," Adv. Mater., vol. 9, pp. 783-793, 1997.
23. M. S. Hybertsen, "bsorption and emission of light in nanoscale silicon structures," Phys. Rev. Lett., vol. 72, pp. 1514-1517, 1994.
24. L. Tsybeskov, S. P. Duttagupta, and P. M. Fauchet, "Photoluminescence and electroluminescence in partially oxidized porous silicon," Solid State Commun., vol. 95, pp. 429-433, 1995.
25. L. Canham, "Progress toward crystalline-silicon-based light-emitting diodes," MRS Bull., vol. 18, pp. 22-25, July 1993.
26. L. Tsybeskov, S. P. Duttagupta, K. D. Hirschman, and P. M. Fauchet, "Efficient electroluminescence from oxidized porous silicon," Advanced Luminescent Materials, D. J. Lockwood, P. M. Fauchet, N. Koshida, and S. R. J. Brueck, Eds. Pennington, NJ: Electrochem. Soc., 1996, pp. 34-47.
27. L. Tsybeskov, S. P. Duttagupta, K. D. Hirschman, and P. M. Fauchet, "Stable and efficient electroluminescence from a porous silicon-based bipolar device," Appl. Phys. Lett., vol. 68, pp. 2058-2060, 1996.
28. S. P. Duttagupta, X. L. Chen, S. A. Jenekhe, and P. M. Fauchet, "Microhardness of porous silicon films and composites," Solid State Commun., vol. 101, pp. 33-37, 1997.
29. W. Lang, "Thermal conductivity of porous silicon," Properties of Porous Silicon, L. T. Canham, Ed. London, U.K.: INSPEC, Inst. Elect. Eng., 1997, Electronic Materials Information Service Datareviews Series no. 18, pp. 138-141.
30. C. Peng, K. D. Hirschman, and P. M. Fauchet, "Carrier transport in porous silicon light-emitting devices," J. Appl. Phys., vol. 80, pp. 295-300, 1996.
31. T. A. Burr, A. A. Seraphin, E. Werwa, and K. D. Kolenbrander, "Carrier-transport mechanism in thin films of silicon nanoparticles," Phys. Rev. B, vol. 56, pp. 4818-4824, 1997.
32. C. Peng and P. M. Fauchet, "The frequency-response of porous silicon electroluminescent devices," Appl. Phys. Lett., vol. 67, pp. 2515-2517, 1995.
33. L. Tsybeskov, C. Peng, P. M. Fauchet, Q. Gu, and E. A. Schiff, "Drift mobility measurements in porous silicon," in Proc. Mater. Res. Soc. Symp., 1996, vol. 420, pp. 825-829.
34. P. Rao, E. A. Schiff, L. Tsybeskov, and P. M. Fauchet, "Electron time-of-flight measurements in porous silicon," in Proc. Mater. Res. Soc. Symp., 1997, vol. 452, pp. 613-618.
35. J. von Behren, T. van Buuren, M. Zacharias, E. H. Chimowitz, and P. M. Fauchet, "Quantum confinement in nanoscale silicon: The correlation of size with bandgap and luminescence," Solid State Commun., vol. 105, pp. 317-322, 1998.
36. P. D. J. Calcott, K. J. Nash, L. T. Canham, M. J. Kane, and D. Brumhead, "Identification of radiative transitions in highly porous silicon," J. Phys.: Condensed Matter, vol. 5, pp. L91-L98, 1993.
37. J. von Behren, Y. Kostoulas, K. B. Ucer, and P. M. Fauchet, "The femtosecond optical response of porous, amorphous and crystalline silicon," J. Non-Cryst. Solids, pp. 198-200, 957-960, 1996.
38. L. Tsybeskov, K. L. Moore, D. G. Hall, and P. M. Fauchet, "Intrinsic band-edge photoluminescence from silicon clusters at room temperature," Phys. Rev. B, vol. 54, pp. R8361-R8364, 1996.
39. C. Delerue, G. Allan, and M. Lannoo, "Theoretical aspects of the luminescence of porous silicon," Phys. Rev. B, vol. 48, pp. 11024-11036, 1993.
40. F. Koch, V. Petrova-Koch, and T. Muschik, "The luminescence of porous Si: the case for the surface state mechanism," J. Luminesc., vol. 57, pp. 271-281, 1993.
41. G. Allan, C. Delerue, and M. Lannoo, "Nature of luminescent surface states of semiconductor nanocrystallites," Phys. Rev. Lett., vol. 76, pp. 2961-2964, 1996.
42. H. Mizuno, H. Koyama, and N. Koshida, "Oxide-free blue photoluminescence from photochemically etched porous silicon," Appl. Phys. Lett., vol. 69, pp. 3779-3781, 1996.
43. P. M. Fauchet, L. Tsybeskov, S. P. Duttagupta, and K. D. Hirschman, "Stable photoluminescence and electroluminescence from porous silicon," Thin Solid Films, vol. 297, pp. 254-260, 1997.
44. L. Tsybeskov, S. P. Duttagupta, K. D. Hirschman, P. M. Fauchet, K. L. Moore, and D. G. Hall, "Room-temperature photoluminescence and electroluminescence from Er-doped silicon-rich silicon oxide," Appl. Phys. Lett., vol. 70, pp. 1790-1792, 1997.
45. L. Tsybeskov, Ju. V. Vandyshev, and P. M. Fauchet, "Blue emission in porous silicon: oxygen-related photoluminescence," Phys. Rev. B, vol. 49, pp. 7821-7824, 1994.
46. A. Loni, A. J. Simons, T. I. Cox, P. D. J. Calcott, and L. T. Canham, "Electroluminescent porous silicon device with an external quantum efficiency greater than 0.1% under CW operation," Electron. Lett., vol. 31, pp. 1288-1289, 1995.
47. A. J. Simons, T. I. Cox, A. Loni, L. T. Canham, M. J. Uren, C. Reeves, A. G. Cullis, P. D. J. Calcott, M. R. Houlton, and J. P. Newey, "Fabrication and characterization studies of an all solid state porous silicon LED with 0.1% external quantum efficiency," in Advanced Luminescent Materials, D. J. Lockwood, P. M. Fauchet, N. Koshida, and S. R. J. Brueck, Eds. Pennington, NJ: Electrochem. Soc., 1996, pp. 73-86.
48. J. Linnros and N. Lalic, "High quantum efficiency for a porous silicon light emitting diode under pulsed operation," Appl. Phys. Lett., vol. 66, pp. 3048-3050, 1995.
49. S. Lazarouk, P. Jaguiro, S. Katsouba, G. Masini, S. La Monica, G. Maiello, and A. Ferrari, "Stable electroluminescence from reverse biased n-typc porous silicon-aluminum Schottky junction device," Appl. Phys. Lett., vol. 68, pp. 2108-2110, 1996.
50. A. J. Simons, T. I. Cox, A. Loni, P. D. J. Calcott, M. J. Uren, and L. T. Canham, "A study of the factors which determine the modulation speed of a shallow PN junction porous silicon LED," in Mater. Res. Soc. Symp. Proc., 1997, vol. 452, pp. 693-698.
51. P. Steiner, F. Kozlowski, H. Sandmeier, and W. Lang, "New results on electroluminescence from porous silicon," in Mater. Res. Soc. Symp. Proc., 1993, vol. 283, pp. 343-351.
52. L. Tsybeskov, K. L. Moore, S. P. Duttagupta, K. D. Hirschman, D. G. Hall, and P. M. Fauchet, "A Si-based light-emitting diode with room-temperature electroluminescence at 1.1 eV," Appl. Phvs. Lett., vol. 69, pp. 3411-3413, 1996.
53. M. G. Berger, C. Dicker, M. Thonissen, L. Vescan, H. Luth, H. Munder, W. Theiss, M. Wernke, and P. Grosse, "Porosity superlattices: a new class of Si heterostructures," J. Phys. D: Appl. Phys., vol. 27, pp. 1333-1336, 1994.
54. L. Pavesi, "Porous silicon dielectric multilayers and microcavities," Riv. Nuovo Cimento, vol. 20, pp. 1-76, 1997.
55. M. Araki, H. Koyama, and N. Koshida, "Controlled electroluminescence spectra of porous silicon diodes with a vertical optical cavity," Appl. Phys. Lett., vol. 69. pp. 2956-2958, 1996.
56. S. P. Duttagupta, C. Peng, L. Tsybeskov, and P. M. Fauchet, "Manufacture of submicron light-emitting porous silicon areas for miniature LEDs," in Proc. Symp. Mater. Res. Soc., 1995, vol. 380, pp. 73-78.
57. S. P. Duttagupta, C. Peng, P. M. Fauchet, S. K. Kurinec, and T. N. Blanton, "Enhancement and suppression of the formation of porous silicon," J. Vac. Sci. Technol. B, vol. 13, pp. 1230-1235, 1995.
58. K. D. Hirschman, L. Tsybeskov, S. P. Duttagupta, and P. M. Fauchet, "Silicon-based visible light-emitting devices integrated into microelectronic circuits," Nature, vol. 384, pp. 338-341, 1996.
59. L. Tsybeskov, K. D. Hirschman, S. P. Duttagupta, and P. M. Fauchet, "Electroluminescence and carrier transport in LEDs based on silicon-rich silicon oxide," Proc. Symp. Mater. Res. Soc., vol. 452, pp. 681-686, 1997.