Temperature dependent current-voltage characteristics of the Cd/CdO/n-Si/Au-Sb structure

Current Applied Physics

Volumn 10, Issue 2, 2010, Pages 513-520

  Saglam M ^a   Ates A ^a   Yildirim, M A ^b   Guzeldir B ^a   Astam, A ^a  

^a ATATÜRK UNIVERSITY   (Turkey)

^b University of Erzincan   (Turkey)

Author keywords

Activation energy; CdO; Gaussian distribution; Sandwich structure; SILAR method; Thin film

Indexed keywords

ABNORMAL BEHAVIOR; BARRIER HEIGHTS; BARRIER INHOMOGENEITIES; CDO; EXPERIMENTAL VALUES; FORWARD BIAS; IDEALITY FACTORS; IV CHARACTERISTICS; NON-LINEARITY; POTENTIAL FLUCTUATIONS; SAMPLE TEMPERATURE; SERIES RESISTANCES; SILAR METHOD; SUCCESSIVE IONIC LAYER ADSORPTION AND REACTIONS; TEMPERATURE DEPENDENT; TEMPERATURE DEPENDENT I-V CHARACTERISTICS; TEMPERATURE RANGE; TWO-TEMPERATURE;

ACTIVATION ENERGY; ADSORPTION; CADMIUM COMPOUNDS; GAUSSIAN DISTRIBUTION; SANDWICH STRUCTURES; THERMAL EFFECTS; THIN FILM DEVICES; THIN FILMS;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 70350728801     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2009.07.011     Document Type: Article

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