Investigation of low-frequency noise in N-channel finFETs from weak to strong inversion

IEEE Transactions on Electron Devices

Volumn 56, Issue 11, 2009, Pages 2800-2810

  Wei, Chengqing ^a,b   Xiong, Yong Zhong ^b   Zhou, Xing ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

1 f noise; Double gate FinFET; Low frequency noise (LFN)

Indexed keywords

1/F NOISE; ACTIVATION MODELS; ANALYTICAL EXPRESSIONS; DOUBLE-GATE; DOUBLE-GATE FINFET; DRAIN BIAS; FINFETS; FLUCTUATION MODEL; FREQUENCY DEPENDENCE; GENERATION MECHANISM; HOOGE PARAMETERS; LINEAR REGION; LOW-FREQUENCY NOISE; LOW-FREQUENCY NOISE (LFN); MCWHORTER MODEL; N-CHANNEL; NOISE DATA; NOISE-POWER SPECTRA; OXIDE TRAPS; ROOM TEMPERATURE; STRONG INVERSION; SUBTHRESHOLD REGION; SURFACE TRAP DENSITY; TEMPERATURE DEPENDENCE; THERMAL ACTIVATION; VOLTAGE DEPENDENCE; VOLTAGE NOISE; WEAK INVERSIONS;

ACTIVATION ENERGY; DRAIN CURRENT; FIELD EFFECT TRANSISTORS; SOLID-STATE SENSORS; SPECTRAL DENSITY;

THERMAL NOISE;

EID: 70350728650     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2030972     Document Type: Article

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