Analytical charge collection and MTF model for photodiode-based CMOS imagers

IEEE Transactions on Electron Devices

Volumn 49, Issue 5, 2002, Pages 754-761

  Lin, Chi Shao S ^b   Mathur, Bimal P ^a,c   Chang, Mau Chung F ^a,b  

^a IEEE

^b Engineering IV   (United States)

^c Biomorphic VLSI Inc   (United States)

Author keywords

Charge collection; CMOS imagers; Collection efficiency; Modulation transfer function; Pixel design; Quantum efficiency; Spatial resolution

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC CHARGE MEASUREMENT; OPTICAL TRANSFER FUNCTION; QUANTUM EFFICIENCY; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING;

CHARGE COLLECTION EFFICIENCY; CHARGE COLLECTION MODEL; PHOTODIODE BASED IMAGERS; PIXEL DESIGN;

INTEGRATED CIRCUIT TESTING;

EID: 0036564253     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.998581     Document Type: Article

References (10)

1. The silicon diode array camera tube
2. Carrier diffusion degradation of modulation transfer function in charge coupled imagers
3. A method for improving the spatial resolution of frontside-illuminated CCDs
4. MTF simulation including transmittance effects and experimental results of charge-coupled imagers
5. Monte Carlo simulation of the photoelectron crosstalk in silicon image devices
6. Measurement of electron lifetime, electron mobility and band-gap narrowing in heavily doped p-type silicon
7. Measurement of hole mobility in heavily doped n-type silicon
8. Technology and device scaling considerations for CMOS imagers
9. High sensitivity and no-cross-talk pixel technology for embedded CMOS image sensor