Total dose and displacement damage effects in a radiation-hardened CMOS APS

IEEE Transactions on Electron Devices

Volumn 50, Issue 1, 2003, Pages 84-90

  Bogaerts, Jan ^a   Dierickx, Bart ^a   Meynants, Guy ^a   Uwaerts, Dirk ^a  

^a CYPRESS SEMICONDUCTOR   (United States)

Author keywords

CMOS active pixel sensor (APS); Dark current; Displacement damage; Fixed pattern noise; Ionizing radiation

Indexed keywords

CMOS INTEGRATED CIRCUITS; COBALT; ELECTROOPTICAL EFFECTS; IONIZING RADIATION; LEAKAGE CURRENTS; PHOTODIODES; PROTON IRRADIATION; RADIATION EFFECTS; RADIATION HARDENING; READOUT SYSTEMS;

CMOS ACTIVE PIXEL SENSOR; DARK CURRENT; DISPLACEMENT DAMAGE; FIXED PATTERN NOISE;

IMAGE SENSORS;

EID: 0037250443     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2002.807251     Document Type: Article

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