Radiation-induced dark current in CMOS active pixel sensors

IEEE Transactions on Nuclear Science

Volumn 47, Issue 6, 2000, Pages 2485-2491

  Cohen, Muriel ^a   David, Jean Pierre ^a  

^a ONERA   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; COBALT; ELECTRIC FIELDS; MOS CAPACITORS; PHOTODIODES; PROTON IRRADIATION;

CMOS ACTIVE PIXEL SENSORS; DARK CURRENT; IONIZING EFFECTS; PHOTODIODE PIXELS; PHOTOGATE PIXELS;

SENSORS;

EID: 0034450824     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.903797     Document Type: Article

References (19)

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18. Proton-induced displacement damage fluctuations in silicon microvolumes