Analysis of temporal noise in CMOS photodiode active pixel sensor

IEEE Journal of Solid-State Circuits

Volumn 36, Issue 1, 2001, Pages 92-101

  Tian, Hui ^a   Fowler, Boyd ^b   El Gamal, Abbas ^a  

^a Stanford University   (United States)

^b Pixel Devices International Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE COUPLED DEVICES; CMOS INTEGRATED CIRCUITS; GATES (TRANSISTOR); PHOTODIODES; SHOT NOISE; TIME DOMAIN ANALYSIS;

ACTIVE PIXEL SENSORS; TEMPORAL NOISE;

IMAGE SENSORS;

EID: 0035111662     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/4.896233     Document Type: Article

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