Sensitivity of CMOS based imagers and scaling perspectives

IEEE Transactions on Electron Devices

Volumn 47, Issue 11, 2000, Pages 2110-2122

  Lulé, Tarek ^a   Benthien, Stephan ^a   Keller, Holger ^a   Muütze, Frank ^a   Rieve, Peter ^a   Seibel, Konstantin ^a   Sommer, Michael ^a   Boöhm, Markus ^a,b  

^a Silicon Vision GmbH   (Germany)

^b UNIVERSITY OF SIEGEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

APPLICATION SPECIFIC INTEGRATED CIRCUITS; CHARGE COUPLED DEVICES; CMOS INTEGRATED CIRCUITS; ELECTRIC PROPERTIES; INTEGRATED CIRCUIT LAYOUT; OPTICAL PROPERTIES; PARAMETER ESTIMATION; PHOTODIODES; PHOTOTRANSISTORS; SEMICONDUCTOR DEVICE STRUCTURES; SENSITIVITY ANALYSIS; THIN FILM DEVICES;

ACTIVE PIXEL SENSORS; FIXED PATTERN NOISE; PHOTOGATE; PINNED PHOTODIODE; PIXEL TRANSISTORS; RADIOMETRIC SENSITIVITY; SYSTEM-ON-A-CHIP CAPABILITY;

IMAGE SENSORS;

EID: 0034317115     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.877173     Document Type: Article

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