Z-contrast imaging of AlN exclusion layers in GaN field-effect transistors

Applied Physics Letters

Volumn 87, Issue 4, 2005, Pages

  Wallis, D J ^a   Balmer, R S ^a   Keir, A M ^a   Martin, T ^a  

^a QINETIQ   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

MICROWAVE HETEROJUNCTIONS; NUMBER DENSITY; SHEET RESISTIVITY;

FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; IMAGING TECHNIQUES; INTERFACES (MATERIALS); MICROWAVES; SCATTERING;

ALUMINUM NITRIDE;

EID: 23644457822     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2001134     Document Type: Article

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