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Journal of Crystal Growth

Volumn 234, Issue 2-3, 2002, Pages 305-310

Growth of crack-free AlGaN film on high-temperature thin AlN interlayer

(3) Lee, In Hwan a Kim, Tae Geun a Park, Yongjo a

a Samsung Advanced Institute of Technology (SAIT) (South Korea)

Author keywords

A1. Cathodoluminescence; A1. Doping; A1. Stress; A3. Metalorganic chemical vapor deposition; B1. Nitrides

Indexed keywords

CATHODOLUMINESCENCE; CHEMICAL VAPOR DEPOSITION; CRACKS; ELECTRON MOBILITY; MORPHOLOGY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DOPING; STRESSES;

LATTICE-MISMATCH;

FILM GROWTH;

EID: 0036131670 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(01)01702-X Document Type: Article

Times cited : (38)

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