Surface strain and its impact on the electrical resistivity of GaN channel in AlGaN/GaN high electron mobility transistor

Applied Physics Letters

Volumn 93, Issue 22, 2008, Pages

  Mahadik, Nadeemullah A ^a   Qadri, Syed B ^b   Rao, Mulpuri V ^a  

^a Krasnow Institute for Advanced Study   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC RESISTANCE; ELECTRIC RESISTANCE MEASUREMENT; ELECTRON MOBILITY; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; IMPACT RESISTANCE; RESONANT TUNNELING; SEMICONDUCTING GALLIUM; SHEET RESISTANCE;

ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; DEVICE STRUCTURES; ELECTRICAL RESISTIVITIES; HIGH RESOLUTIONS; PLANE STRAINS; ROCKING CURVES; SHEET RESISTANCE MEASUREMENTS; SHEET RESISTANCE VARIATIONS; SURFACE STRAINS; X-RAY DIFFRACTIONS;

TENSILE STRAIN;

EID: 57349163164     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3040315     Document Type: Article

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