Enhancement-mode double-top-gated metal-oxide-semiconductor nanostructures with tunable lateral geometry

Physical Review B - Condensed Matter and Materials Physics

Volumn 80, Issue 11, 2009, Pages

  Nordberg, E P ^a,b   Ten Eyck, G A ^a   Stalford, H L ^a,c   Muller, R P ^a   Young, R W ^a   Eng, K ^a   Tracy, L A ^a   Childs, K D ^a   Wendt, J R ^a   Grubbs, R K ^a   Stevens, J ^a   Lilly, M P ^a   Eriksson, M A ^b   Carroll, M S ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b UNIVERSITY OF WISCONSIN MADISON   (United States)

^c UNIVERSITY OF OKLAHOMA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 70350612883     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.80.115331     Document Type: Article

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