Lack of charge offset drift is a robust property of Si single electron transistors

Applied Physics Letters

Volumn 92, Issue 6, 2008, Pages

  Hourdakis, Emmanouel ^a   Wahl, Jeremy A ^a,b   Zimmerman, Neil M ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^b Submicron Development Center   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE OFFSET DRIFT; SINGLE ELECTRON TRANSISTORS (SET);

ELECTRIC CHARGE; SILICON;

TRANSISTORS;

EID: 39349108874     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2841659     Document Type: Article

References (13)

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