Coulomb blockade in a silicon/silicon-germanium two-dimensional electron gas quantum dot

Applied Physics Letters

Volumn 84, Issue 20, 2004, Pages 4047-4049

  Klein, L J ^a   Slinker, K A ^a   Truitt, J L ^a   Goswami, S ^a   Lewis, K L M ^a   Coppersmith, S N ^a   Van Der Weide, D W ^a   Friesen, Mark ^a   Blick, R H ^a   Savage, D E ^a   Lagally, M G ^a   Tahan, Charlie ^a   Joynt, Robert ^a   Eriksson, M A ^a   Chu, J O ^b   Ott, J A ^b   Mooney, P M ^b  

^a UNIVERSITY OF WISCONSIN MADISON   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON SPIN RELAXATION; PARALLEL CONDUCTION; SINGLE ELECTRON TRANSISTORS; TWO-DIMENSIONAL ELECTRON GAS (2DEG);

CARRIER CONCENTRATION; COULOMB BLOCKADE; ELECTRIC CHARGE; ELECTRON BEAM LITHOGRAPHY; ELECTRON GAS; FIELD EFFECT TRANSISTORS; HETEROJUNCTIONS; LOW TEMPERATURE EFFECTS; REACTIVE ION ETCHING; SEMICONDUCTOR DOPING; SILICON COMPOUNDS; THYRISTORS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 2942525941     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1751612     Document Type: Article

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