Simulation of grain boundary effect on characteristics of ZnO thin film transistor by considering the location and orientation of grain boundary

Chinese Physics B

Volumn 18, Issue 9, 2009, Pages 3966-3969

  Zhou, Yu Ming ^a   He, Yi Gang ^a   Lu, Ai Xia ^a   Wan, Qing ^a  

^a HUNAN UNIVERSITY   (China)

Author keywords

Grain boundary; Simulation; ZnO thin film transistor

Indexed keywords

CHANNEL DIRECTIONS; DRAIN EDGE; GRAIN BOUNDARY EFFECTS; POTENTIAL BARRIER HEIGHT; POTENTIAL BARRIERS; SIMULATION; TRANSISTOR CHARACTERISTICS; ZNO THIN FILM; ZNO THIN FILM TRANSISTOR;

ELECTRIC PROPERTIES; FREONS; GRAIN BOUNDARIES; METALLIC FILMS; NUCLEAR PHYSICS; OPTICAL FILMS; SEMICONDUCTING ZINC COMPOUNDS; SIMULATORS; THIN FILM TRANSISTORS; THIN FILMS; ZINC OXIDE;

GRAIN SIZE AND SHAPE;

EID: 70350443617     PISSN: 16741056     EISSN: None     Source Type: Journal    
DOI: 10.1088/1674-1056/18/9/057     Document Type: Article

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