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Volumn 6, Issue 1, 2006, Pages 109-113

Electrical characterization of single grain and single grain boundary of pentacene thin film by nano-scale electrode array

Author keywords

Mobility; Nano scale electrode array; Organic thin film transistor; Pentacene; Single grain; Single grain boundary

Indexed keywords

ELECTRIC PROPERTIES; FIELD EFFECT TRANSISTORS; POLYCRYSTALLINE MATERIALS; RESISTORS; THIN FILMS;

EID: 27544464692     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2005.03.001     Document Type: Article
Times cited : (8)

References (8)
  • 2
    • 0041379529 scopus 로고    scopus 로고
    • Performance and degradation in single grain-size pentacene thin-film transistors
    • T. Komoda, K. Kita, K. Kyuno, and A. Toriumi Performance and degradation in single grain-size pentacene thin-film transistors Jpn. J. Appl. Phys. 42 6A 2003 3662
    • (2003) Jpn. J. Appl. Phys. , vol.42 , Issue.6 , pp. 3662
    • Komoda, T.1    Kita, K.2    Kyuno, K.3    Toriumi, A.4
  • 3
    • 0942277751 scopus 로고    scopus 로고
    • Surface potential profiling and contact resistance measurements on operating pentacene thin film transistors by kelvin probe force microscopy
    • K. Puntambekar, P. Pesavento, and C. Frisbie Surface potential profiling and contact resistance measurements on operating pentacene thin film transistors by kelvin probe force microscopy Appl. Phys. Lett. 83 26 2003 5539
    • (2003) Appl. Phys. Lett. , vol.83 , Issue.26 , pp. 5539
    • Puntambekar, K.1    Pesavento, P.2    Frisbie, C.3
  • 5
    • 23944505465 scopus 로고    scopus 로고
    • Fabrication of highly oriented rubrene thin films by the use of atomically finished substrate and pentacene buffer layer
    • in press
    • M. Haemori, J. Yamaguchi, S. Yamnagida, K. Itaka, H. Koinuma, Fabrication of highly oriented rubrene thin films by the use of atomically finished substrate and pentacene buffer layer, Jpn. J. Appl. Phys., in press.
    • Jpn. J. Appl. Phys.
    • Haemori, M.1    Yamaguchi, J.2    Yamnagida, S.3    Itaka, K.4    Koinuma, H.5
  • 6
    • 0018011483 scopus 로고
    • Grain growth mechanism of heavily phosphorus implanted polycrystalline silicon
    • Y. Wada, and S. Nishimatsu Grain growth mechanism of heavily phosphorus implanted polycrystalline silicon J. Electrochem. Soc. 125 9 1978 1499
    • (1978) J. Electrochem. Soc. , vol.125 , Issue.9 , pp. 1499
    • Wada, Y.1    Nishimatsu, S.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.