Effects of Si interlayer on resistance switching of Pt/Si/ TiO2 /Pt structures

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 27, Issue 5, 2009, Pages 2175-2181

  Go, Seunghee ^a   Jeong, Kyunghoon ^a   Lee, Kwanwoo ^a   Kim, Ara ^a   Ruh, Hyun ^b   Kim, Chang Soo ^b   Lee, Jaegab ^a  

^a Kookmin University   (South Korea)

^b Korea Research Institute of Standards and Science   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ADHESION PROPERTIES; MULTISTRUCTURES; ON-RESISTANCE; RESISTIVE SWITCHING; SI LAYER; SOURCE AND SINK; SWITCHING CYCLES; TIO;

ADHESION; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; MECHANICAL STABILITY; PLATINUM; SILICATES; SILICON; SWITCHING; SWITCHING SYSTEMS;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 70349680753     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3207744     Document Type: Article

References (21)

1. I. G. Baek, Tech. Dig.-Int. Electron Devices Meet. 0163-1918 2004, 587.
2. S. Seo, Appl. Phys. Lett. 0003-6951 85, 5655 (2004). 10.1063/1.1831560 (Pubitemid 40162553)
3. S. Seo, Appl. Phys. Lett. 0003-6951 86, 093509 (2005). 10.1063/1.1872217 (Pubitemid 40870917)
4. I. G. Baek, Tech. Dig.-Int. Electron Devices Meet. 0163-1918 2005, 769.
5. S. H. Won, S. H. Go, K. W. Lee, and J. G. Lee, Electron. Mater. Lett. 4, 29 (2008).
6. D. C. Kim, Appl. Phys. Lett. 0003-6951 88, 232106 (2006). 10.1063/1.2210087 (Pubitemid 43877731)
7. R. J. Jung, Appl. Phys. Lett. 0003-6951 91, 022112 (2007). 10.1063/1.2755712
8. C. Rohde, B. J. Choi, D. S. Jeong, S. Choi, J. S. Zhao, and C. S. Hwang, Appl. Phys. Lett. 0003-6951 86, 262907 (2005). 10.1063/1.1968416 (Pubitemid 40983220)
9. K. M. Kim, B. J. Choi, Y. C. Shin, S. Choi, and C. S. Hwang, Appl. Phys. Lett. 0003-6951 91, 012907 (2007). 10.1063/1.2749846 (Pubitemid 350092117)
10. D. S. Jeong, B. J. Choi, and C. S. Hwang, J. Appl. Phys. 0021-8979 100, 113724 (2006). 10.1063/1.2399332 (Pubitemid 46012190)
11. S. Y. Kweon, S. K. Choi, S. J. Yeom, and J. S. Roh, Jpn. J. Appl. Phys., Part 1 0021-4922 40, 5850 (2001). 10.1143/JJAP.40.5850
12. C. A. Crider, J. M. Poate, J. E. Rowe, and T. T. Sheng, J. Appl. Phys. 0021-8979 52, 2860 (1981). 10.1063/1.329018 (Pubitemid 11417596)
13. R. M. Anderson and T. M. Reith, J. Electrochem. Soc. 0013-4651 122, 1337 (1975). 10.1149/1.2134013
14. D. Brassard, D. K. Sarkar, M. A. El Khakani, and L. Ouellet, J. Vac. Sci. Technol. A 0734-2101 22, 851 (2004). 10.1116/1.1722530
15. K. J. Hubbard and D. G. Schlom, J. Mater. Res. 0884-2914 11, 2757 (1996). 10.1557/JMR.1996.0350
16. R. N. S. Sodhi, A. Weninger, J. E. Davies, and K. Sreenivas, J. Vac. Sci. Technol. A 0734-2101 9, 1329 (1991). 10.1116/1.577621
17. J. Jun, M. Dhayal, J. H. Shin, J. C. Kim, and N. Getoff, Radiat. Phys. Chem. 0969-806X 75, 583 (2006). 10.1016/j.radphyschem.2005.10.015 (Pubitemid 43255306)
18. C. Y. Lin, C. Y. Wu, C. Y. Wu, T. Y. Tseng, and C. Hu, J. Appl. Phys. 0021-8979 102, 094101 (2007). 10.1063/1.2802990
19. M. Hasan, R. Dong, H. J. Choi, D. S. Lee, D. J. Seong, M. B. Pyun, and H. Hwang, Appl. Phys. Lett. 0003-6951 92, 202102 (2008). 10.1063/1.2932148 (Pubitemid 351733886)
20. R. Waser and M. Aono, Nature Mater. 1476-1122 6, 833 (2007). 10.1038/nmat2023 (Pubitemid 350064191)
21. S. Chakraborty, M. K. Bera, S. Bhattacharya, and C. K. Maiti, Microelectron. Eng. 0167-9317 81, 188 (2005). 10.1016/j.mee.2005.03.005 (Pubitemid 41108131)