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Volumn 78, Issue 12, 2001, Pages 1688-1690

Photoluminescence and electrical characteristics of the two-dimensional electron gas in Si delta-doped GaN layers

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0035911429     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1353836     Document Type: Article
Times cited : (4)

References (16)
  • 1
    • 0013320716 scopus 로고
    • edited by A. C. Gossard Academic, New York
    • E. F. Schubert, in Semiconductors and Semimetals, edited by A. C. Gossard (Academic, New York, 1994), Vol. 40, p. 1.
    • (1994) Semiconductors and Semimetals , vol.40 , pp. 1
    • Schubert, E.F.1
  • 15
    • 36549100456 scopus 로고    scopus 로고
    • The simulation program used, "1D POISSON" by G. L. Snider, is available through the Internet at http://www.nd/edu/∼gsnider. Also see, I. H. Tan, G. L. Snider, L. D. Cheng, and E. L. Hu, J. Appl. Phys. 68, 4071 (1990).
    • 1D POISSON
    • Snider, G.L.1
  • 16
    • 36549100456 scopus 로고    scopus 로고
    • The simulation program used, "1D POISSON" by G. L. Snider, is available through the Internet at http://www.nd/edu/∼gsnider. Also see, I. H. Tan, G. L. Snider, L. D. Cheng, and E. L. Hu, J. Appl. Phys. 68, 4071 (1990).
    • (1990) J. Appl. Phys. , vol.68 , pp. 4071
    • Tan, I.H.1    Snider, G.L.2    Cheng, L.D.3    Hu, E.L.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.