High-density plasma etch selectivity for the III-V nitrides

Solid-State Electronics

Volumn 42, Issue 12, 1998, Pages 2269-2276

  Shul, R J ^a   Willison, C G ^a   Bridges, M M ^a   Han, J ^a   Lee, J W ^b   Pearton, S J ^b   Abernathy, C R ^b   Mackenzie, J D ^b   Donovan, S M ^b  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b UNIVERSITY OF FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FILM GROWTH; PLASMA ETCHING; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR PLASMAS;

GALLIUM NITRIDE; INDUCTIVELY COUPLED PLASMAS (ICP);

SEMICONDUCTING FILMS;

EID: 0032289845     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(98)00224-X     Document Type: Article

References (18)

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