AlGaN/GaN heterostructure-based surface acoustic wave-structures for chemical sensors

Applied Surface Science

Volumn 255, Issue 3, 2008, Pages 712-714

  Lalinsky T ^a   Rufer, L ^b   Vanko, G ^a   Mir, S ^b   Haščík, Š ^a   Mozolová, Ž ^a   Vincze, A ^c   Uherek, F ^c  

^a INSTITUTE OF ELECTRICAL ENGINEERING   (Slovakia)

^b TIMA LABORATORY   (France)

^c INTERNATIONAL LASER CENTER   (Slovakia)

Author keywords

AlGaN; GaN; Plasma; SAW

Indexed keywords

ACOUSTIC SURFACE WAVE DEVICES; ACOUSTIC WAVES; ALUMINUM GALLIUM NITRIDE; CHEMICAL SENSORS; III-V SEMICONDUCTORS; PLASMA APPLICATIONS; PLASMAS; SAWING; SECONDARY ION MASS SPECTROMETRY; ULTRASONIC TRANSDUCERS;

ALGAN; ALGAN/GAN HETEROSTRUCTURES; INTERDIGITAL TRANSDUCER; NEW APPROACHES; PLASMA TREATMENT; PROCESS TECHNOLOGIES; SECONDARY ION MASS SPECTROSCOPY; SURFACE ACOUSTIC WAVES;

GALLIUM NITRIDE;

EID: 55649097766     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.07.016     Document Type: Article

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