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Journal of Applied Physics

Volumn 106, Issue 6, 2009, Pages

Electron dynamics in GaN wafers with an inhomogeneous distribution of defects in the depth direction

(4) Ohashi, Yuji a Katayama, Kenji a Shen, Qing b Toyoda, Taro b

a CHUO UNIVERSITY (Japan)

b UNIVERSITY OF ELECTRO COMMUNICATIONS (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; CARRIER DYNAMICS; DEFECT STATE; DEPTH DEPENDENCE; DISLOCATION DEFECTS; DISLOCATION DENSITIES; ELECTRON DYNAMICS; EXPONENTIAL DECAYS; INHOMOGENEOUS DISTRIBUTION; NEAR-FIELD; PHOTOEXCITED ELECTRONS; PUMP WAVELENGTH; TRANSIENT GRATING; TRAPPED ELECTRONS;

DEFECTS; DYNAMICS; GALLIUM ALLOYS; GALLIUM NITRIDE; SEMICONDUCTING GALLIUM;

ELECTRONS;

EID: 70349643217 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3197281 Document Type: Article

Times cited : (5)

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