Advantages of the time-resolved four-wave mixing technique for studies of non-equilibrium carrier dynamics in bulk semiconductors and structures

Optical Materials

Volumn 30, Issue 5, 2008, Pages 780-782

  Aleksiejunas, R ^a   Kadys, A ^a   Malinauskas, T ^a   Neimontas, K ^a   Gudelis, V ^a   Jarasiunas, K ^a   Fochuk, P ^b   Feychuk, P ^b  

^a VILNIUS UNIVERSITY   (Lithuania)

^b CHERNIVTSI NATIONAL UNIVERSITY   (Ukraine)

Author keywords

Carrier diffusion; Carrier lifetime; CdTe; Defects; Four wave mixing; GaN; InP

Indexed keywords

CARRIER CONCENTRATION; CARRIER LIFETIME; CARRIER MOBILITY; CRYSTAL IMPURITIES; PHOTOCONDUCTIVITY; SEMICONDUCTING CADMIUM COMPOUNDS;

AMBIPOLAR DIFFUSION; CARRIER DIFFUSION; SEMICONDUCTOR CRYSTALS;

FOUR WAVE MIXING;

EID: 37249066706     PISSN: 09253467     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.optmat.2007.02.037     Document Type: Article

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