Time-resolved photoluminescence spectroscopy in GaN-based semiconductors with micron spatial resolution

Journal of Luminescence

Volumn 87, Issue , 2000, Pages 1196-1198

  Izumi, T ^a   Narukawa, Y ^a   Okamoto, K ^a   Kawakami, Y ^a   Fujita, Sg ^a   Nakamura, S ^b  

^a KYOTO UNIVERSITY   (Japan)

^b NICHIA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); ELECTRON ENERGY LEVELS; EPITAXIAL GROWTH; MOLECULAR DYNAMICS; PHOTOLUMINESCENCE; SPECTROSCOPY; TRANSMISSION ELECTRON MICROSCOPY;

MICRON SPATIAL RESOLUTION; NONRADIATIVE PROCESS; NONRADIATIVE RECOMBINATION CENTERS; THREADING DISLOCATION;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0033746089     PISSN: 00222313     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-2313(99)00594-3     Document Type: Article

References (6)

1. Mukai T., Takekawa K., Nakamura S. Jpn. J. Appl. Phys. 37:1998;L839.
2. Sugahara T.et al. Jpn. J. Appl. Phys. 37:1998;L398.
3. Chichibu S.et al. Appl. Phys. Lett. 74:1999;1460.
4. Porowski Solid State Commun. 97(11):1996;919.
5. Chichibu S., Azuhata T., Sota T., Nakamura S. J. Appl. Phys. 79:1996;2784.
6. T. Izumi, Y. Narukawa, K. Okamoto, Sz. Fujita, Sg. Fujita, S. Nakamura, unpublished data.