Surface and bulk exciton recombination dynamics in GaN freestanding films via one- and two-photon excitations

Journal of Materials Science: Materials in Electronics

Volumn 18, Issue SUPPL. 1, 2007, Pages 453-457

  Zhong, Yongchun ^a   Wong, Kam Sing ^a   Zhang, Weili ^b   Look, D C ^c,d  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

^b Oklahoma State University   (United States)

^c WRIGHT STATE UNIVERSITY   (United States)

^d AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EXCITONS; PHOTOLUMINESCENCE; RELAXATION PROCESSES; SEMICONDUCTING FILMS; SURFACE DEFECTS; TEMPERATURE;

BULK EXCITON RECOMBINATION DYNAMICS; NONRADIATIVE PROCESSES; TWO-PHOTON EXCITATION;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 34547586730     PISSN: 09574522     EISSN: 1573482X     Source Type: Journal    
DOI: 10.1007/s10854-007-9253-1     Document Type: Conference Paper

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