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Physica Status Solidi (A) Applied Research

Volumn 183, Issue 1, 2001, Pages 151-155

Time-resolved photoluminescence in strained GaN layers

(6) Pozina, G a Edwards, N V a Bergman, J P a Monemar, B a Bremser, M D b Davis, R F b

a LINKÖPING UNIVERSITY (Sweden)

b North Carolina State University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TRANSITIONS; EXCITONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SILICON CARBIDE; STRAIN; SUBSTRATES;

RECOMBINATION LIFETIME; TIME RESOLVED PHOTOLUMINESCENCE SPECTROSCOPY;

GALLIUM NITRIDE;

EID: 0035122880 PISSN: 00318965 EISSN: None Source Type: Journal
DOI: 10.1002/1521-396X(200101)183:1<151::AID-PSSA151>3.0.CO;2-C Document Type: Article

Times cited : (6)

References (8)

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