Evaluation of Band-Gap Energies and Characterization of Nonradiative Recombination Centers of Film and Bulk GaN Crystals

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 8, 2003, Pages 4905-4908

  Kamano, Masaru ^a   Haraguchi, Masanobu ^a   Fukui, Masuo ^a   Kuwahara, Minoru ^a   Okamoto, Toshihiro ^a   Mukai, Takashi ^b   Shinomiya, Genichi ^b  

^a UNIVERSITY OF TOKUSHIMA   (Japan)

^b NICHIA CORPORATION   (Japan)

Author keywords

Absorption cofficient; Deep level; GaN; Impurity; Photothermal spectroscopy

Indexed keywords

CRYSTALS; GALLIUM NITRIDE; LIGHT EMITTING DIODES; SAPPHIRE; SPECTROSCOPIC ANALYSIS; THIN FILMS; VAPOR PHASE EPITAXY;

NONRADIATIVE RECOMBINATION CENTERS; PHOTOTHERMAL DIVERGENCE (PTD);

ENERGY GAP;

EID: 0142107421     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.4905     Document Type: Article

References (20)

1. P. Ramvall, Y. Aoyagi, A. Kuramata, P. Hacke, K. Domen and K. Horino: Appl. Phys. Lett. 76 (2000) 2994.
2. S. G. Spruytte, C. W. Coldren, J. S. Harris, W. Wampler, P. Krispin, K. Ploog and M. C. Larson: J. Appl. Phys. 89 (2001) 4401.
3. Z.-Q. Fang, J. W. Hemsky, D. C. Look and M. P. Mack: Appl. Phys. Lett. 72 (1998) 448.
4. Z.-Q. Fang, W. Kim, Z. Fan, A. Botchkarev and H. Morkoç: Appl. Phys. Lett. 72 (1998) 2277.
5. W. I. Lee, T. C. Huang, J. D. Quo and M. S. Feng: Appl. Phys. Lett. 67 (1995) 1721.
6. M. A. Olmstead, N. M. Amer and S. Kohn: Appl. Phys. A 32 (1983) 141.
7. H. Saito, M. Irikura, M. Haraguchi and M. Fukui: Appl. Opt. 31 (1992) 2047.
8. M. Kamano, M. Haraguchi, T. Niwaki, M. Fukui, M. Kuwahara, T. Okamoto and T. Mukai: Jpn. J. Appl. Phys. 41 (2002) 5034.
9. M. Haraguchi, H. Okamoto, T. Nunotani and M. Fukui: Jpn. J. Appl. Phys. 34 (1995) 3280.
10. L. C. M. Miranda: Appl. Opt. 22 (1983) 2882.
11. A. C. Boccara, D. Fournier, W. B. Jackson and N. M. Amer: Opt. Lett. 5 (1980) 377.
12. W. B. Jackson, N. M. Amer, A. C. Boccara and D. Fournier: Appl. Opt. 20 (1981) 1333.
13. H. Morkoç: Nitride Semiconductors and Devices (Springer-Verlag, New York, 1999).
14. L. Liu and J. H. Edger: Mater. Sci. Eng. R 37 (2002) 61.
15. G. Yu, G. Wang, H. Ishikawa, M. Umeno, T. Soga, T. Egawa, J. Watanabe and T. Jimbo: Appl. Phys. Lett. 70 (1997) 3209.
16. I.-H. Lee, I.-H. Choi, C. R. Lee and S. K. Noh: Appl. Phys. Lett. 71 (1997) 1359.
17. T. Kozawa, T. Kachi, H. Kano, H. Nagase, N. Koide and K. Manabe: J. Appl. Phys. 77 (1995) 4389.
18. N. Itoh, J. C. Rhee, T. Kawabata and S. Koike: J. Appl. Phys. 58 (1985) 1828.
19. H. Teisseyre, P. Perlin, T. Suski, I. Grzegory, S. Porowski, J. Jun, A. Pietraszko and T. D. Moustakas: J. Appl. Phys. 76 (1994) 2429.
20. B. Monemar: Phys. Rev. B 10 (1974) 676.