Effects of postdeposition annealing on electrical properties of Mo-doped indium oxide (IMO) thin films deposited by RF magnetron cosputtering

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 45, Issue 42-45, 2006, Pages

  Yamada, Naoomi ^a   Tatejima, Tsukasa ^a   Ishizaki, Hiroki ^a   Nakada, Tokio ^a  

^a AOYAMA GAKUIN UNIVERSITY   (Japan)

Author keywords

Cosputtering; High mobility; IMO; Mo doped In2O3; Postdepositon annealing

Indexed keywords

DOPING (ADDITIVES); INDIUM COMPOUNDS; MAGNETRON SPUTTERING; MOLYBDENUM; OPACITY; THIN FILMS;

COSPUTTERING; HIGH MOBILITY; POSTDEPOSITION; POSTDEPOSITON ANNEALING;

OXIDE FILMS;

EID: 34249302974     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.L1179     Document Type: Article

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