High mobility W-doped In 2 O 3 thin films: Effect of growth temperature and oxygen pressure on structural, electrical and optical properties

Applied Surface Science

Volumn 254, Issue 6, 2008, Pages 1661-1665

  Gupta, R K ^a   Ghosh, K ^a   Mishra, S R ^b   Kahol, P K ^a  

^a MISSOURI STATE UNIVERSITY   (United States)

^b University of Memphis   (United States)

Author keywords

Electrical properties; Indium oxide; Optical materials and properties; Semiconductor; Thin films; Tungsten

Indexed keywords

ELECTRIC PROPERTIES; GROWTH TEMPERATURE; INDIUM COMPOUNDS; SEMICONDUCTOR MATERIALS; TUNGSTEN COMPOUNDS;

INDIUM OXIDE; OXYGEN PRESSURE; TRANSPARENT THIN FILMS;

THIN FILMS;

EID: 37349011260     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2007.07.146     Document Type: Article

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