Optical properties of GaN quantum dots grown on nonpolar (11-20) SiC by molecular-beam epitaxy

Applied Physics Letters

Volumn 86, Issue 17, 2005, Pages 1-3

  Founta, S ^b   Rol, F ^b   Bellet Amalric, E ^b   Bleuse, J ^b   Daudin, B ^b   Gayrat, B ^b   Mariette, H ^b   Moisson, C ^a  

^a SAVOIE TECHNOLAC   (France)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRIC FIELD EFFECTS; GALLIUM NITRIDE; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; MORPHOLOGY; OPTICAL PROPERTIES; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SILICON CARBIDE;

DEGREASING; NONPOLAR QUANTUM WELLS; POLARIZATION FIELDS; WAVE-FUNCTIONS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 20844440330     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1905807     Document Type: Article

References (18)

1. J. Simon, N. T. Pelekanos, C. Adelmann, E. Martinez-Guerrero, R. Andŕ, B. Daudin, L. S. Dang, and H. Mariette, Phys. Rev. B 68, 035312 (2003).
2. P. Lefebvre, J. All̀gre, B. Gil, H. Mathieu, N. Grandjean, M. Leroux, J. Massies, and P. Bigenwald, Phys. Rev. B 59, 15363 (1999)
3. H. M. Ng, Appl. Phys. Lett. 80, 4369 (2002).
4. M. D. Craven, S. H. Lim, F. Wu, J. S. Speck, and S. P. DenBaars, Appl. Phys. Lett. 81, 469 (2002);
5. M. D. Craven, S. H. Lim, F. Wu, J. S. Speck, and S. P. DenBaars, Appl. Phys. Lett. 81, 1201 (2002).
6. P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K. H. Ploog, Nature (London) 406, 865 (2000);
7. P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K. H. Ploog, Phys. Rev. B 65, 075202 (2002).
8. N. Onojima, J. Suda, and H. Matsunami, Jpn. J. Appl. Phys., Part 2 41, L1348 (2002).
9. M. D. Craven, F. Wu, A. Chakraborty, B. Imer, U. K. Mishra, S. P. DenBaars, and J. S. Speck, Appl. Phys. Lett. 84, 1281 (2004).
10. M. D. Craven, P. Waltereit, J. S. Speck, and S. P. DenBaars, Appl. Phys. Lett. 84, 496 (2004)
11. W. H. Sun, J. W. Yang, C. Q. Chen, J. P. Zhang, M. E. Gaevski, E. Kuokstis, V. Adivarahan, H. M. Wang, Z. Gong, M. Su, and M. Asif Khan, Appl. Phys. Lett. 83, 2599 (2003).
12. H. N. Ng, A. Bell, F. A. Ponce, and S. N. G. Chu, Appl. Phys. Lett. 83, 653 (2003).
13. C. Adelmann, J. Brault, D. Jalabert, P. Gentile, H. Mariette, G. Mula, and B. Daudin, J. Appl. Phys. 91, 9638 (2002).
14. N. Gogneau, D. Jalabert, E. Monroy, T. Shibata, M. Tanaka, and B. Daudin, J. Appl. Phys. 94, 2254 (2003).
15. E. Monroy, E. Sarigiannidou, F. Fossard, N. Gogneau, E. Bellet-Amalric, J.-L. Rouvìre, S. Monnoye, H. Mank, and B. Daudin, Appl. Phys. Lett. 84, 3684 (2004).
16. C. Van de Walle and J. Neugebauer, Phys. Rev. Lett. 88, 066103 (2002);
17. F. Tinjod and H. Mariette, Phys. Status Solidi B 241, 550 (2004).
18. M. McLaurin, B. Haskell, S. Nakamura, and J. S. Speck, J. Appl. Phys. 96, 327 (2004).