The effects of adjacent dislocations on the electronic and optical properties of GaN/AlN quantum dots

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 13, Issue 2-4, 2002, Pages 1094-1097

  Andreev, A D ^a   Downes, J R ^b,c   O'Reilly E P ^a  

^a UNIVERSITY OF SURREY   (United Kingdom)

^b QUEEN MARY UNIVERSITY OF LONDON   (United Kingdom)

^c UNIVERSITY COLLEGE CORK   (Ireland)

Author keywords

Dislocation; GaN; Quantum dot

Indexed keywords

DISLOCATIONS (CRYSTALS); ELECTRONIC PROPERTIES; ELECTROSTATICS; GALLIUM NITRIDE; GROUND STATE; OPTICAL PROPERTIES; SEMICONDUCTING ALUMINUM COMPOUNDS;

ELECTROSTATIC POTENTIAL;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0036492675     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(02)00311-9     Document Type: Article

References (14)