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Volumn 101, Issue 11, 2007, Pages

Polarized emission lines from A - And B -type excitonic complexes in single InGaN/GaN quantum dots

Author keywords

[No Author keywords available]

Indexed keywords

COMPLEXATION; ELECTRONIC STRUCTURE; GALLIUM NITRIDE; POLARIZATION; SEMICONDUCTOR QUANTUM DOTS; SINGLE CRYSTALS;

EID: 34250635968     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2743893     Document Type: Article
Times cited : (51)

References (26)
  • 8
    • 34250613964 scopus 로고
    • IEEE International Conference on Computers, Systems, and Signal Processing, Bangalore, India
    • C. Bennet and G. Brassard, IEEE International Conference on Computers, Systems, and Signal Processing, Bangalore, India (1984), Vol. 1, p. 175179.
    • (1984) , vol.1 , pp. 175179
    • Bennet, C.1    Brassard, G.2
  • 10
    • 0033221304 scopus 로고    scopus 로고
    • 0031-8965 10.1002/(SICI)1521-396X(199911)176:1<611::AID-PSSA611>3. 0.CO;2-1
    • A. Strittmatter, A. Krost, J. Bläsing, and D. Bimberg, Phys. Status Solidi A 0031-8965 10.1002/(SICI)1521-396X(199911)176:1<611::AID- PSSA611>3.0.CO;2-1 176, 611 (1999).
    • (1999) Phys. Status Solidi A , vol.176 , pp. 611
    • Strittmatter, A.1    Krost, A.2    Bläsing, J.3    Bimberg, D.4
  • 23
    • 34250678565 scopus 로고    scopus 로고
    • The following parameters have been replaced by those of Ref. 23: The effective electron masses, mei, the Luttinger-type parameters, Ai, and the Kane parameters, EPi, of InN and GaN; the band gap, EG, of InN.
    • The following parameters have been replaced by those of Ref.: The effective electron masses, mei, the Luttinger-type parameters, Ai, and the Kane parameters, EPi, of InN and GaN; the band gap, EG, of InN.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.