Anisotropic strain relaxation in a-plane GaN quantum dots

Journal of Applied Physics

Volumn 101, Issue 6, 2007, Pages

  Founta, S ^a   Coraux, J ^b   Jalabert, D ^b   Bougerol, C ^b   Rol, F ^b   Mariette, H ^b   Renevier, H ^b   Daudin, B ^b   Oliver, R A ^c   Humphreys, C J ^c   Noakes, T C Q ^d   Balley, P ^d  

^a CEA GRENOBLE   (France)

^b UNIV GRENOBLE ALPES   (France)

^c UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^d DARESBURY LABORATORY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; ATOMIC FORCE MICROSCOPY; BURGERS VECTOR; GALLIUM NITRIDE; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR GROWTH; STRAIN RELAXATION;

MEDIUM ENERGY ION SCATTERING (MEIS); MONOLAYER SCALE; STRAIN PROFILE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 34047093302     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2713937     Document Type: Article

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