Source and drain parasitic resistances of amorphous silicon transistors: comparison between top nitride and bottom nitride configurations

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers

Volumn 35, Issue 8, 1996, Pages 4257-4260

  Rolland, A ^a   Richard, J ^a   Kleider, J P ^a   Mencaraglia, D ^a  

^a ORANGE LABS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EQUIVALENT CIRCUITS; FABRICATION; OHMIC CONTACTS; PERFORMANCE; SILICON NITRIDE; THIN FILM TRANSISTORS;

CONTACT RESISTANCE; FIELD EFFECT MOBILITY;

AMORPHOUS SILICON;

EID: 0030205594     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.4257     Document Type: Article

References (10)