Solution-processed n-type organic field-effect transistors with high ON/ OFF current ratios based on fullerene derivatives

IEEE Electron Device Letters

Volumn 28, Issue 10, 2007, Pages 880-883

  Tiwari, S P ^a   Namdas, E B ^b   Ramgopal Rao, V ^a   Fichou, D ^b,c   Mhaisalkar, S G ^b  

^a INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^c CNRS   (France)

Author keywords

Field effect mobility; Hopping; Organic field effect transistor (OFET)

Indexed keywords

ACTIVATION ENERGY; ELECTRON MOBILITY; ELECTRONS; FULLERENES; SEMICONDUCTING ORGANIC COMPOUNDS;

FIELD-EFFECT MOBILITY; ORGANIC FIELD-EFFECT TRANSISTORS; THERMALLY ACTIVATED HOPPING;

FIELD EFFECT TRANSISTORS;

EID: 34948812397     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.905960     Document Type: Article

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