메뉴 건너뛰기




Volumn 15, Issue 4, 2009, Pages 1292-1297

The structure of GaN-based transverse junction blue LED array for uniform distribution of injected current/carriers

Author keywords

GaN LEDs; White light generation

Indexed keywords

ACTIVE AREA; BLUE LEDS; CARRIER DISTRIBUTIONS; ELECTROLUMINESCENCE SPECTRA; GAN LAYERS; GAN LEDS; INJECTION CARRIERS; MULTIPLE QUANTUM WELLS; NONUNIFORM; NONUNIFORM CURRENT DISTRIBUTIONS; P-N JUNCTION; P-TYPE GAN; TRANSVERSE FLOW; UNIFORM DISTRIBUTION; WHITE LIGHT GENERATION;

EID: 70349308525     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2009.2017029     Document Type: Article
Times cited : (12)

References (24)
  • 2
    • 0042099114 scopus 로고    scopus 로고
    • Cambridge, U.K.: Cambridge Univ. Press ch. 12
    • E. F. Schubert, Light-Emitting Diodes. Cambridge, U.K.: Cambridge Univ. Press, 2003, ch. 12.
    • (2003) Light-Emitting Diodes
    • Schubert, E.F.1
  • 3
    • 0035927104 scopus 로고    scopus 로고
    • Current crowding and optical saturation effects in GaInN/GaN light-emitting diodes grown on insulating substrates
    • DOI 10.1063/1.1372359
    • X. Guo and E. F. Schubert, "Current crowding and optical saturation effects in GaInN/GaN light-emitting diodes grown on insulating substrates," Appl. Phys. Lett., vol.78, pp. 3337-3339, 2001. (Pubitemid 33611557)
    • (2001) Applied Physics Letters , vol.78 , Issue.21 , pp. 3337-3339
    • Guo, X.1    Schubert, E.F.2
  • 5
    • 2942741317 scopus 로고    scopus 로고
    • InGaN-GaN MQW LEDs with current blocking layer formed by selective activation
    • Jun.
    • C.-M. Lee, C.-C. Chuo, Y.-C. Liu, I.-L. Chen, and J.-I. Chyi, "InGaN-GaN MQW LEDs with current blocking layer formed by selective activation," IEEE Electron Device Lett., vol.25, no.6, pp. 384-386, Jun. 2004.
    • (2004) IEEE Electron Device Lett. , vol.25 , Issue.6 , pp. 384-386
    • Lee, C.-M.1    Chuo, C.-C.2    Liu, Y.-C.3    Chen, I.-L.4    Chyi, J.-I.5
  • 6
    • 3142539066 scopus 로고    scopus 로고
    • In-GaN/GaN light emitting diodes with a lateral current blocking structure
    • H.-C. Wang, Y.-K. Su, C.-L. Lin, W.-B. Chen, and S.-M. Chen, "In-GaN/GaN light emitting diodes with a lateral current blocking structure," Jpn. J. Appl. Phys., vol. 43, no. 4B, pp. 2006-2007, 2007.
    • (2007) Jpn. J. Appl. Phys. , vol.43 , Issue.4 B , pp. 2006-2007
    • Wang, H.-C.1    Su, Y.-K.2    Lin, C.-L.3    Chen, W.-B.4    Chen, S.-M.5
  • 8
    • 37149027248 scopus 로고    scopus 로고
    • Blue-emitting InGaN-GaN double-heterostructure light-emitting diodes reaching maximum quantum efficiency above 200 A/cm2
    • N. F. Gardner, G. O. Muller, Y. C. Shen, G. Chen, S. Watanabe, W. Götz, and M. R. Krames, "Blue-emitting InGaN-GaN double- heterostructure light-emitting diodes reaching maximum quantum efficiency above 200 A/cm2 ," Appl. Phys. Lett., vol.91, pp. 243506-1-243506-3, 2007.
    • (2007) Appl. Phys. Lett. , vol.91 , pp. 2435061-2435063
    • Gardner, N.F.1    Muller, G.O.2    Shen, Y.C.3    Chen, G.4    Watanabe, S.5    Götz, W.6    Krames, M.R.7
  • 10
    • 33845805945 scopus 로고    scopus 로고
    • InP-based transverse junction light-emitting diodes for white-light generation at infrared wavelengths
    • Oct.
    • J.-W. Shi, T.-J. Hung, Y.-Y. Chen, Y.-S. Wu, W. Lin, and Y.-J. Yang, "InP-based transverse junction light-emitting diodes for white-light generation at infrared wavelengths," IEEE Photon. Technol. Lett., vol.18, no.6, pp. 2053-2055, Oct. 2006.
    • (2006) IEEE Photon. Technol. Lett. , vol.18 , Issue.6 , pp. 2053-2055
    • Shi, J.-W.1    Hung, T.-J.2    Chen, Y.-Y.3    Wu, Y.-S.4    Lin, W.5    Yang, Y.-J.6
  • 13
    • 33645696669 scopus 로고    scopus 로고
    • Emission mechanism of mixed-color InGaN/GaN multi-quantum-well light-emitting diodes
    • S. C. Shei, J. K. Sheu, C. M. Tsai, W. C. Lai, M. L. Lee, and C. H. Kuo, "Emission mechanism of mixed-color InGaN/GaN multi-quantum-well light-emitting diodes," Jpn. J. Appl. Phys., vol. 45, no. 4A, pp. 2463-2466, 2006.
    • (2006) Jpn. J. Appl. Phys. , vol.45 , Issue.4 A , pp. 2463-2466
    • Shei, S.C.1    Sheu, J.K.2    Tsai, C.M.3    Lai, W.C.4    Lee, M.L.5    Kuo, C.H.6
  • 14
    • 0041422330 scopus 로고    scopus 로고
    • Carrier dynamics in nitride-based light-emitting p-n junction diodes with two active regions emitting at different wavelengths
    • Y.-L. Li, T. H. Gessmann, E. F. Schubert, and J. K. Sheu, "Carrier dynamics in nitride-based light-emitting p-n junction diodes with two active regions emitting at different wavelengths," J. Appl. Phys., vol.94, pp. 2167-2172, 2003.
    • (2003) J. Appl. Phys. , vol.94 , pp. 2167-2172
    • Li, Y.-L.1    Gessmann, T.H.2    Schubert, E.F.3    Sheu, J.K.4
  • 15
    • 2942702357 scopus 로고    scopus 로고
    • Influence of separate confinement heterostructure on emission bandwidth of InGaAsP superluminescent diodes/semiconductor optical amplifiers with nonidentical multiple quantum wells
    • Jun.
    • C.-F. Lin, Y.-S. Su, C.-H. Wu, and G. S. Shmavonyan, "Influence of separate confinement heterostructure on emission bandwidth of InGaAsP superluminescent diodes/semiconductor optical amplifiers with nonidentical multiple quantum wells," IEEE Photon. Technol. Lett., vol.16, no.6, pp. 1441-1443, Jun. 2004.
    • (2004) IEEE Photon. Technol. Lett. , vol.16 , Issue.6 , pp. 1441-1443
    • Lin, C.-F.1    Su, Y.-S.2    Wu, C.-H.3    Shmavonyan, G.S.4
  • 17
    • 33947587499 scopus 로고    scopus 로고
    • Fabrication of dicing-free vertical-structured high-power GaN-based light-emitting diodes with selective nickel electroplating and patterned laser liftoff techniques
    • Mar.
    • S.-L. Chen, S.-J. Wang, K.-M. Uang, T.-M. Chen, W.-C. Lee, and B.-W. Liou, "Fabrication of dicing-free vertical-structured high-power GaN-based light-emitting diodes with selective nickel electroplating and patterned laser liftoff techniques," IEEE Photon. Technol. Lett., vol.19, no.6, pp. 351-353, Mar. 2007.
    • (2007) IEEE Photon. Technol. Lett. , vol.19 , Issue.6 , pp. 351-353
    • Chen, S.-L.1    Wang, S.-J.2    Uang, K.-M.3    Chen, T.-M.4    Lee, W.-C.5    Liou, B.-W.6
  • 18
    • 54849417454 scopus 로고    scopus 로고
    • Enhancement of InGaN-GaN Indium-Tin-Oxide flip-chip light-emitting diodes with TiO2 -SiO2 multilayer stack omnidirectional reflector
    • Sep./Oct.
    • C.-H. Lin, C. F. Lai, T. S. Ko, H. W. Huang, H. C. Kuo, Y. Y. Hung, K. M. Leung, C. C. Yu, R. J. Tsai, C. K. Lee, T. C. Lu, and S. C. Wang, "Enhancement of InGaN-GaN Indium-Tin-Oxide flip-chip light-emitting diodes with TiO2 -SiO2 multilayer stack omnidirectional reflector," IEEE Photon. Technol. Lett., vol.18, no.17-20, pp. 2050-2052, Sep./Oct. 2006.
    • (2006) IEEE Photon. Technol. Lett. , vol.18 , Issue.17-20 , pp. 2050-2052
    • Lin, C.-H.1    Lai, C.F.2    Ko, T.S.3    Huang, H.W.4    Kuo, H.C.5    Hung, Y.Y.6    Leung, K.M.7    Yu, C.C.8    Tsai, R.J.9    Lee, C.K.10    Lu, T.C.11    Wang, S.C.12
  • 20
    • 20444454215 scopus 로고    scopus 로고
    • Influence of junction temperature on chromaticity and color-rendering properties of trichromatic white-light sources based on light-emitting diodes
    • S. Chhajed, Y. Xi, Y.-L. Li, T. H. Gessmann, and E. F. Schubert, "Influence of junction temperature on chromaticity and color-rendering properties of trichromatic white-light sources based on light-emitting diodes," J. Appl. Phys., vol.97, no.5, pp. 054506-1-054506-8, 2005.
    • (2005) J. Appl. Phys. , vol.97 , Issue.5 , pp. 0545061-0545068
    • Chhajed, S.1    Xi, Y.2    Li, Y.-L.3    Gessmann, T.H.4    Schubert, E.F.5
  • 22
    • 0036544438 scopus 로고    scopus 로고
    • Phosphorconversion white light emitting diode using InGaN near-ultraviolet chip
    • Y. Narukawa, I. Niki, K. Izuno, M. Yamada, Y. Murazaki, and T. Mukai, "Phosphor-conversion white light emitting diode using InGaN near-ultraviolet chip," Jpn. J. Appl. Phys., vol. 41, no. 4A, pp. L371-L373, 2002.
    • (2002) Jpn. J. Appl. Phys. , vol.41 , Issue.4 A
    • Narukawa, Y.1    Niki, I.2    Izuno, K.3    Yamada, M.4    Murazaki, Y.5    Mukai, T.6
  • 23
    • 33845781604 scopus 로고    scopus 로고
    • Junction temperature-controlled spectrum in a two-color InGaN-GaN quantum-well light-emitting diode
    • Dec.
    • C.-F. Lu, D.-M. Yeh, H.-S. Chen, C.-F. Huang, J.-J. Huang, and C. C. Yang, "Junction temperature-controlled spectrum in a two-color InGaN-GaN quantum-well light-emitting diode," IEEE Photon. Technol. Lett., vol.18, no.24, pp. 2671-2673, Dec. 2006.
    • (2006) IEEE Photon. Technol. Lett. , vol.18 , Issue.24 , pp. 2671-2673
    • Lu, C.-F.1    Yeh, D.-M.2    Chen, H.-S.3    Huang, C.-F.4    Huang, J.-J.5    Yang, C.C.6
  • 24
    • 33947594911 scopus 로고    scopus 로고
    • Dislocation-free m-plane InGaN/GaN light-emitting diodes on m-plane GaN single crystals
    • K. Okamoto, H. Ohta, D. Nakagawa, M. Sonobe, J. Ichihara, and H. Takasu, "Dislocation-free m-plane InGaN/GaN light-emitting diodes on m-plane GaN single crystals," Jpn. J. Appl. Phys., vol.45, no.4, pp. L1197-L1199, 2006.
    • (2006) Jpn. J. Appl. Phys. , vol.45 , Issue.4
    • Okamoto, K.1    Ohta, H.2    Nakagawa, D.3    Sonobe, M.4    Ichihara, J.5    Takasu, H.6


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.