InGaN/GaN light emitting diodes with a lateral current blocking structure

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 4 B, 2004, Pages 2006-2007

  Wang, Hsin Chuan ^a   Su, Yan Kuin ^a   Lin, Chun Liang ^a   Chen, Wen Bin ^a   Chen, Shi Ming ^b  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b Epitech Technology Corporation   (Taiwan)

Author keywords

Current blocking hole; Forward voltage; InGaN GaN; Light emitting diodes (LEDs); Light output

Indexed keywords

BONDING; DEPOSITION; ELECTRIC POTENTIAL; GALLIUM COMPOUNDS; INDIUM; METALLIZING; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MULTILAYERS; NITROGEN COMPOUNDS; SEMICONDUCTOR MATERIALS; SUBSTRATES;

CURRENT BLOCKING HOLE; FORWARD VOLTAGE; INJECTED CURRENT; LIGHT OUTPUT;

LIGHT EMITTING DIODES;

EID: 3142539066     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.2006     Document Type: Conference Paper

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