Influence of separate confinement heterostructure on emission bandwidth of InGaAsP superluminescent diodes/semiconductor optical amplifiers with nonidentical multiple quantum wells

IEEE Photonics Technology Letters

Volumn 16, Issue 6, 2004, Pages 1441-1443

  Lin, Ching Fuh ^a   Su, Yi Shin ^a   Wu, Chao Hsin ^a   Shmavonyan, Gagik S ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

Carrier transport; Emission spectrum; Nonuniform carrier distribution; Semiconductor optical amplifier (SOA); Separate confinement heterostructure (SCH); Superluminescent diode (SLD)

Indexed keywords

BANDWIDTH; CARRIER MOBILITY; HETEROJUNCTIONS; LIGHT EMISSION; LUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS; SPECTRUM ANALYSIS;

CARRIER TRANSPORT; EMISSION BANDWIDTH; EMISSION SPECTRUM; NONIDENTICAL MULTIPLE QUANTUM WELLS; NONUNIFORM CARRIER DISTRIBUTION; SEMICONDUCTOR OPTICAL AMPLIFIERS; SUPERLUMINESCENT DIODES;

LIGHT AMPLIFIERS;

EID: 2942702357     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2004.827119     Document Type: Article

References (16)

1. A. T. Semenov, V. R. Shidlovski, and S. A. Safin, "Wide spectrum single quantum well superluminescent diodes at 0.8 μm with bent optical waveguide," Electron. Lett., vol. 29, pp. 854-857, 1993.
2. T. R. Chen, L. Eng, Y. H. Zhuang, and A. Yariv, "Quantum well superluminescent diodes with very wide emission spectrum," Appl. Phys. Lett., vol. 56, pp. 1345-1346, 1990.
3. C.-F. Lin, B.-L. Lee, and B.-J. Lin, "Broad-band superluminescent diodes fabricated on a substrate with asymmetric dual quantum wells," IEEE Photon. Technol. Lett., vol. 8, pp. 1456-1458, Nov. 1996.
4. X. Zhu, D. Cassidy, M. Hamp, D. Thompson, B. Robinson, Q. Zhao, and M. Davies, "1.4-μm InGaAsP-InP strained multiple-quantum-well laser for broad-wavelength tunability," IEEE Photon. Technol. Lett., vol. 9, pp. 1202-1204, Sept. 1997.
5. H. S. Gingrich, D. R. Chumney, S.-Z. Sun, S. D. Hersee, L. F. Lester, and S. R. Brueck, "Broadly tunable external cavity laser diodes with staggered thickness multiple quantum wells," IEEE Photon. Technol. Lett., vol. 9, pp. 155-157, Feb. 1997.
6. C.-F. Lin and B.-L. Lee, "Extremely broadband AlGaAs/GaAs superluminescent diodes," Appl. Phys. Lett., vol. 71, pp. 1598-1600, 1997.
7. T. F. Krauss, G. Hondromitros, B. Vogele, and R. M. De La Rue, "Broad spectral bandwidth semiconductor lasers," Electron. Lett., vol. 33, pp. 1142-1143, 1997.
8. N. Tessler and G. Eisenstein, "On carrier injection and gain dynamics in quantum well lasers," IEEE J. Quantum Electron., vol. 29, pp. 1586-1595, June 1993.
9. R. Nagarajan, T. Fukushima, S. W. Corzine, and J. E. Bowers, "Effects of carrier transport on high-speed quantum-well lasers," Appl. Phys. Lett., vol. 59, pp. 1835-1837, 1991.
10. H. Yamazaki, A. Tomita, M. Yamaguchi, and Y. Sasaki, "Evidence of nonuniform carrier distribution in multiple quantum well lasers," Appl. Phys. Lett., vol. 71, pp. 767-769, 1997.
11. B.-L. Lee, C.-F. Lin, L.-W. Laih, and W. Lin, "Experimental evidence of nonuniform carrier distribution in multiple-quantum-well laser diodes," Electron. Lett., vol. 34, pp. 1230-1231, 1998.
12. C.-F. Lin, B.-R. Wu, L.-W. Laih, and T.-T. Shih, "Sequence influence of nonidentical InGaAsP quantum wells on broadband characteristics of semiconductor optical amplifiers/superluminescent diodes," Opt. Lett., vol. 26, pp. 1099-1101, 2001.
13. C.-F. Lin, B.-R. Wu, and L.-W. Laih, "Electron-determined nonuniform carrier distribution among InGaAsP multiple quantum wells," J. Appl. Phys., vol. 42, pp. 5557-5558, 2003.
14. M. J. Hamp, D. T. Cassidy, B. J. Robinson, Q. C. Zhao, D. A. Thompson, and M. Davies, "Effect of barrier height on the uneven carrier distribution in asymmetric multiple-quantum-well InGaAsP lasers," IEEE Photon. Technol. Lett., vol. 1380-1382, Oct. 1998.
15. M. J. Hamp, D. T. Cassidy, B. J. Robinson, Q. C. Zhao, and D. A. Thompson, "Effect of barrier thickness on the carrier distribution in asymmetric multiple-quantum-well InGaAsP lasers," IEEE Photon. Technol. Lett., vol. 12, pp. 134-136, Feb. 2000.
16. C.-F. Lin, Y.-S. Su, and B.-R. Wu, "External-cavity semiconductor laser tunable from 1.3 to 1.54 μm for optical communication," IEEE Photon. Technol. Lett., vol. 14, pp. 3-5, Jan. 2002.